Abstract: A clamping and contacting device for mounting and electrically contacting thin silicon rods in silicon deposition reactors is disclosed, the clamping and contacting device having a rod holder for receiving one end of a thin silicon rod. The rod holder comprises at least three contact elements disposed around a receiving space for the thin silicon rod. Each of the contact elements forms a contact surface facing towards a receiving space for electrically and mechanically contacts the thin silicon rod, wherein the contact surfaces of adjacent contact elements are spaced apart.

Abstract: A clamping and contacting device for mounting and electrically contacting thin silicon rods in silicon deposition reactors is disclosed, the clamping and contacting device having a rod holder for receiving one end of a thin silicon rod. The rod holder comprises at least three contact elements disposed around a receiving space for the thin silicon rod. Each of the contact elements forms a contact surface facing towards a receiving space for electrically and mechanically contacts the thin silicon rod, wherein the contact surfaces of adjacent contact elements are spaced apart.

Abstract: An arrangement for measurement of temperature and thickness growth of silicon rods in a silicon deposition reactor employs a temperature measurement device located outside the reactor. Continuous temperature measurement and measurement of the thickness growth throughout the entire deposition process is achieved with a contactlessly operating temperature measurement device arranged outside the silicon deposition reactor in front of a viewing window. The temperature measurement device can be pivoted horizontally about a rotation axis by a rotating drive. The pivoting axis runs parallel to a longitudinal axis of the silicon rod, and the central axis of the temperature measurement device runs through the pivoting axis.

Abstract: A composite structure having a substantially monocrystalline growth substrate and at least one monocrystalline or polycrystalline layer of diamond or diamond-like material arranged on a surface of the growth substrate, the surface of the growth substrate being provided with crystal growth nuclei having crystal axes which exhibit an inclination of not more than 10%, preferably not more than 7%, with respect to corresponding axes of the crystal lattice of the growth substrate, and a process for producing such a composite structure in which the growth substrate is pretreated and growth nuclei are deposited from a nucleating gas phase of known composition for depositing layers of diamond or diamond-like material, in which during the nucleation the growth substrate is raised to a negative electrical potential relative to the nucleating gas phase.

Abstract: The invention relates to a component and to a method for the production. The component is an electronic component with a micro electronic chip and a carrier which is produced by means of isothermal coagulation.