Abstract: a method for semiconductor device manufacture comprising the steps of, (a) repetitively aligning photomasks over a surface of a semiconductor substrate, said substrate having a layer of opaque material on said surface, said opaque material being adapted to receive and retain a photographic pattern; and (b) at least one of said steps employing a photomask of a particular construction, said particularly constructed photomask being placed in physical contact with said opaque material, said particularly constructed photomask essentially consisting of a planar glass substrate having a thickness of approximately 0.25 inches, one surface of said glass substrate having a thin film of chrome thereon, said thin film of chrome having a thickness of approximately 0.1 microns, said thin film of chrome having a photographic pattern formed therein, a layer of SiO.sub.2 fully covering said thin film of chrome and said surface of said glass substrate, said SiO.sub.