Abstract: An AlGaAs-based semiconductor laser diode is disclosed which has a Zn-stop diffusion layer of p-type conductivity deposited on the active layer, having an Al content greater than 85%.

Abstract: Monolithically integrated devices are disclosed in which a laser having a capping layer with a relatively high conductivity imparting ion concentration is laterally offset along a planar surface from a surface layer having a lower conductivity imparting ion concentration.The monolithically integrated laser and surface layer are formed by providing laterally offset channels in a planar substrate surface and selectively epitaxially growing the required laser layers and the surface layer in separate channels.

Abstract: Lasers differing in emission wavelengths are disclosed monolithically integrated in a common substrate providing positive index guiding of adjacent lasers. The lasers and the substrate together present a planar semiconductive surface.The monolithically integrated laser structure is formed by providing laterally offset channels in a planar substrate surface and selectively depositing cladding and active layers in the channels, with the composition of at least one of the cladding and active layers in one channel differing from that in another.

Abstract: A process of preparing a laterally confined positive index waveguide is disclosed in which a monocrystalline substrate comprised of a III-V compound is provided having adjacent one major surface monocrystalline gallium aluminum arsenide having a resistivity greater than 10.sup.5 ohm-cm. A protective layer is provided on the substrate, and a channel is opened in the substrate to expose an unprotected portion of the substrate. A waveguide region is formed by selectively depositing epitaxially on only the unprotected portion of the substrate at least one III-V compound of a higher refractive index than the substrate monocrystalline gallium aluminum arsenide. Epitaxial deposition is terminated when the waveguide region forms with the one major surface an overall planar surface, and at least on layer bridging the substrate and the waveguide region is deposited on the planar surface.

Abstract: A method for forming metal chalcogenides is disclosed. An atmosphere of an elemental middle chalcogen is formed and a metal is reacted with the chalcogen in the vapor phase to form a metal chalcogenide powder.

Abstract: An efficient light emitting diode is disclosed wherein the spatial distribution of emitted radiation is highly uniform. In accordance with the present invention, a transparent electrode is used to couple current to the light emitting diode junction in a manner that minimizes the resistance at the interface between the transparent electrode and semiconductor diode material. Specifically, it has been found that the interface resistance is significantly reduced, and device efficiency thus increased, by forming a thin metal-based layer at such interface and/or by annealing the transparent electrode after formation on the device.

Abstract: A method of fabricating an electrode structure of transparent metal oxide on a solid-state electrooptical device is disclosed. A layer of conductive transparent metal oxide is deposited on the surface of the device. Thereafter, the transparent conductive layer is covered with a layer of pattern metal that forms a good electrical contact with the transparent metal oxide and is etchable independently of the transparent metal oxide. Portions of the pattern metal are etched away to define the desired electrode pattern using a photolithographic technique and an etchant that attacks the pattern metal but does not substantially attack the transparent metal oxide layer. Portions of the transparent metal oxide layer not covered by the pattern metal are removed using an etchant that attacks the transparent metal oxide but does not substantially attack the pattern metal.

Abstract: A solid state imaging device is formed of a bulk of monocrystalline silicon which has been suitably doped. A transparent layer of SiO.sub.2 overlays the bulk silicon, and atop the SiO.sub.2 layer is at least one pattern of doped SiC electrodes. Successive patterns of SiC electrodes are insulated from each other by SiO.sub.2. The SiC and SiO.sub.2, being derivatives of silicon, passivate the bulk and serve, respectively, as transparent electrodes and transparent support for such electrodes.

Abstract: A method of molding glass elements requiring no further preparatory operations such as grinding or polishing before use wherein a portion of glass is heat-softened and subjected to pressure in a mold having molding surfaces formed of silicon carbide (SiC) or silicon nitride (Si.sub.3 N.sub.4).