Abstract: A widely tunable, mode-hop-free semiconductor laser operating in the mid-IR comprises a QCL laser chip having an effective QCL cavity length, a diffraction grating defining a grating angle and an external cavity length with respect to said chip, and means for controlling the QCL cavity length, the external cavity length, and the grating angle. The laser of claim 1 wherein said chip may be tuned over a range of frequencies even in the absence of an anti-reflective coating. The diffraction grating is controllably pivotable and translatable relative to said chip and the effective QCL cavity length can be adjusted by varying the injection current to the chip. The laser can be used for high resolution spectroscopic applications and multi species trace-gas detection. Mode-hopping is avoided by controlling the effective QCL cavity length, the external cavity length, and the grating angle so as to replicate a virtual pivot point.

Abstract: A multiple image photolithography system includes a radiation source (18) projecting electromagnetic radiation along a path. A reticle cartridge (26) is located in the path of the projected radiation. The cartridge (26) includes a photomask (34,36) located in the path of the projected radiation and a Fabry-Perot interferometer (54) located in the path of the projected radiation. A radiation-sensitive material (30) is located in the path of the projected radiation such that the projected radiation encounters the reticle cartridge (26) before the projected radiation encounters the radiation-sensitive material (30).

Abstract: A multiple image photolithography system includes a radiation source (18) projecting electromagnetic radiation along a path. A reticle cartridge (26) is located in the path of the projected radiation. The cartridge (26) includes a photomask (34,36) located in the path of the projected radiation and a Fabry-Perot interferometer (54) located in the path of the projected radiation. A radiation-sensitive material (30) is located in the path of the projected radiation such that the projected radiation encounters the reticle cartridge (26) before the projected radiation encounters the radiation-sensitive material (30).

Abstract: A multiple image photolithography system includes a radiation source (18) projecting electromagnetic radiation along a path. A reticle cartridge (26) is located in the path of the projected radiation. The cartridge (26) includes a photomask (34,36) located in the path of the projected radiation and a Fabry-Perot interferometer (54) located in the path of the projected radiation. A radiation-sensitive material (30) is located in the path of the projected radiation such that the projected radiation encounters the reticle cartridge (26) before the projected radiation encounters the radiation-sensitive material (30).