Abstract: A method for forming polycrystalline semiconductor film from amorphous semiconductor film at reduced temperatures and/or accelerated rates. The inclusion of a small percentage of semiconductor material, such as 2% within the metal layer, reduces the temperatures required for crystallization of the amorphous semiconductor by at least 50° C. in comparison to the use of the metal layer without the small percentage of semiconductor material. During a low temperature isothermal annealing process adjacent Al-2% Si and a-Si films undergo a layer exchange resulting in formation of a continuous polycrystalline silicon film having good physical and electrical properties. Formation of polycrystalline-semiconductor in this manner is suitable for use with low temperature substrates (e.g., glass, plastic) as well as with numerous integrated circuit and MEMs fabrication devices and practices.

Abstract: A method for forming polycrystalline semiconductor film from amorphous semiconductor film at reduced temperatures and/or accelerated rates. The inclusion of a small percentage of semiconductor material, such as 2% within the metal layer, reduces the temperatures required for crystallization of the amorphous semiconductor by at least 50° C. in comparison to the use of the metal layer without the small percentage of semiconductor material. During a low temperature isothermal annealing process adjacent Al-2% Si and a-Si films undergo a layer exchange resulting in formation of a continuous polycrystalline silicon film having good physical and electrical properties. Formation of polycrystalline-semiconductor in this manner is suitable for use with low temperature substrates (e.g., glass, plastic) as well as with numerous integrated circuit and MEMs fabrication devices and practices.