Patents by Inventor Frank W. WIRBELEIT

Frank W. WIRBELEIT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices having encapsulated isolation regions and related fabrication methods
    Patent number: 8536019
    Abstract: Apparatus and related fabrication methods are provided for semiconductor device structures having encapsulated isolation regions. An exemplary method for fabricating a semiconductor device structure involves the steps of forming an isolation region of a first dielectric material in the semiconductor substrate adjacent to a first region of the semiconductor material, forming a first layer of a second dielectric material overlying the isolation region and the first region, and removing the second dielectric material overlying the first region leaving portions of the second dielectric material overlying the isolation region intact. The isolation region is recessed relative to the first region, and the second dielectric material is more resistant to an etchant than the first dielectric material.
    Type: Grant
    Filed: May 17, 2011
    Date of Patent: September 17, 2013
    Assignee: GLOBALFOUNDRIES, Inc.
    Inventors: Ricardo P. Mikalo, Frank W. Wirbeleit
  • SEMICONDUCTOR DEVICES HAVING ENCAPSULATED ISOLATION REGIONS AND RELATED FABRICATION METHODS
    Publication number: 20120292734
    Abstract: Apparatus and related fabrication methods are provided for semiconductor device structures having encapsulated isolation regions. An exemplary method for fabricating a semiconductor device structure involves the steps of forming an isolation region of a first dielectric material in the semiconductor substrate adjacent to a first region of the semiconductor material, forming a first layer of a second dielectric material overlying the isolation region and the first region, and removing the second dielectric material overlying the first region leaving portions of the second dielectric material overlying the isolation region intact. The isolation region is recessed relative to the first region, and the second dielectric material is more resistant to an etchant than the first dielectric material.
    Type: Application
    Filed: May 17, 2011
    Publication date: November 22, 2012
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Ricardo P. MIKALO, Frank W. WIRBELEIT