Abstract: Systems, devices, and methods for disposing of refuse are disclosed. A refuse container may comprise a housing, a lid, an actuator, odor-blocking doors, a base, and an automatic door subassembly. The odor-blocking doors may mount to the housing and the lid may hingedly attach to the housing. The actuator may operatively couple to the base and the automatic door subassembly. Actuating the actuator may move the automatic door subassembly from a first position to a second position to open the lid. A user may place the refuse on the odor-blocking doors. The automatic door subassembly may then move from the second position to a third position to close the lid, from the third position to a fourth position to open the odor-blocking doors such that the refuse drops through the odor-blocking doors, and from the fourth position back to the first position to close the odor-blocking doors.

Abstract: The invention discloses a preparation method of silicon-carbon composite negative electrode material, relates to the field of negative electrode materials preparation The method includes the following steps: mixing starch with water, and carrying out stirring, dispersing, cooling and standing; soaking a mixture in an ethanol solution and absolute ethyl alcohol, collecting a white solid, performing supercritical drying, crushing, then mixing the solid with a carbon source, keeping the temperature at 180-300° C., 450-600° C., and then 1000-1200° C., carrying out cooling to room temperature, and mixing a carbonized material with a graphite negative electrode material. According to the invention, the elastic material is used to improve electric conduction and achieve lithium storage. When it is filled between the coating layer and the silicon material, good conductivity is kept, effects of silicon can be used, and the defects of silicon can be avoided at the same time.

Abstract: The application discloses a vertical continuous graphitization furnace According to this application, the electrode positive pole is located at a center of a furnace body, several graphite electrode negative poles are horizontally and axially symmetrically distributed with the electrode positive pole at the center of a heating chamber; the inner end of several graphite electrode negative poles and the arc-shaped inner wall of the heating chamber are on the same arc surface; the lower end surface of the electrode positive pole is in the same horizontal plane as the lower surface of multiple graphite electrode negative poles; the longitudinal cross-section of the heating chamber is in an inverted trapezoidal shape. This graphite furnace has the advantages of uniform temperature distribution in the high-temperature heating zone, which can ensure material consistency, temperature controllability, smooth exhaust and impurity removal, and the ability to prepare high-purity artificial graphite materials.

Abstract: The application discloses a processing method for graphite acid purification wastewater which comprises processing steps of neutralization and precipitation preprocessing, supernatant electrically distilling and vaporizing, electric energy recycling, condensate recycling and vaporization residue regularly discharging. The processing method performs neutralization and precipitation preprocessing to obtain neutralized supernatant, pumps the supernatant into an electric distiller to be vaporized and obtain electric energy for recycling through steam turbine, and acquires vaporization condensate by residual heat exchange. The vaporization condensate reaches the standard of graphite acid purification impurities such as fluorine, chlorine, aluminum, silicon, iron, magnesium, copper, and zinc and the wastewater discharge standard. The steam heat energy can be recycled and transformed into electric energy to save processing cost.

Abstract: An electronic device includes a package structure with opposite first and second sides spaced apart along a first direction, opposite third and fourth sides spaced apart along a second direction, opposite fifth and sixth sides spaced apart along a third direction, the first, second, and third directions being orthogonal to one another. A set of first leads extend outward from the first side along the first direction, a set of second leads extend outward from the second side along the first direction, and a thermal pad includes a first portion that extends along a portion of the fifth side, and a second portion that extends along a portion of the third side to facilitate cooling and visual solder inspection when soldered to a host printed circuit board.

Abstract: An electronic device includes a package structure with opposite first and second sides spaced apart along a first direction, opposite third and fourth sides spaced apart along a second direction, opposite fifth and sixth sides spaced apart along a third direction, the first, second, and third directions being orthogonal to one another. A set of first leads extend outward from the first side along the first direction, a set of second leads extend outward from the second side along the first direction, and a thermal pad includes a first portion that extends along a portion of the fifth side, and a second portion that extends along a portion of the third side to facilitate cooling and visual solder inspection when soldered to a host printed circuit board.

Abstract: A Green NAND SSD (GNSD) controller receives reads and writes from a host and writes to flash memory. A SSD DRAM has a DRAM Translation Layer (ETL) with buffers managed by the GNSD controller. The GNSD controller performs deduplication, compression, encryption, high-level error-correction, and grouping of host data writes, and manages mapping tables to store host write data in the SSD DRAM to reduce writes to flash memory. The GNSD controller categorizes host writes as data types for paging files, temporary files, meta-data, and user data files, using address ranges and file extensions read from meta-data tables. Paging files and temporary files are optionally written to flash. Full-page and partial-page data are grouped into multi-page meta-pages by data type before storage by the GNSD controller. Status bits include two overwrite bits indicating frequently-written data that is retained in the SSD DRAM rather than being flushed to flash and re-allocated.

Abstract: A Green NAND Device (GND) driver application queries AC line and battery status and then stores an image of processor states and caches and a resume routine to DRAM when power failure occurs. A DRAM image is then stored to flash memory for a persistent mode when battery power is available. The image in DRAM may be a partial image that includes entries, flushed caches, processor contexts, ramdisks, write caches, and a resume context. Endurance of flash memory is increased by a Super Enhanced Endurance Device (SEED) SSD. In a power down mode, the GND driver limits DRAM use and only caches in DRAM data that can be deleted on power down. Host accesses to flash are intercepted by the GND driver and categorized by data type. Paging files and temporary files cached in DRAM are optionally written to flash.

Abstract: A Green NAND SSD Driver (GNSD) driver executes on a host to increase data-retention of flash memory attached to a Super Enhanced Endurance Device (SEED) or Solid-State Drive (SSD). Host accesses to flash are intercepted by the GNSD driver using upper and lower-level filter drivers. A retention-check timer causes a retention routine to be periodically executed. The routine sends high-level commands to the SEED that causes the SEED to refresh either all data or just data blocks with older write dates. Data is refreshed by moving to a new physical block. The retention routine can track write dates of logical blocks and command a SSD to move logical blocks with older write dates. A retention card has a controller that performs the retention routine when not connected to a host, while a SEED power card allows the SEED to refresh data when no host is attached to the SEED.

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. After formation of a memory opening, all surfaces of the memory opening are provided as silicon oxide surfaces by formation of at least one silicon oxide portion. A silicon nitride layer is formed in the memory opening. After formation of a memory stack structure, backside recesses can be formed employing the silicon oxide portions as an etch stop. The silicon oxide portions can be subsequently removed employing the silicon nitride layer as an etch stop. Physically exposed portions of the silicon nitride layer can be removed selective to the memory stack structure. Damage to the outer layer of the memory stack structure can be minimized or eliminated by successive use of etch stop structures. Electrically conductive layers can be subsequently formed in the backside recesses.

Abstract: A Virtual-Memory Device (VMD) driver and application execute on a host to increase endurance of flash memory attached to a Super Enhanced Endurance Device (SEED) or Solid-State Drive (SSD). Host accesses to flash are intercepted by the VMD driver using upper and lower-level filter drivers and categorized as data types of paging files, temporary files, meta-data, and user data files, using address ranges and file extensions read from meta-data tables. Paging files and temporary files are optionally written to flash. Full-page and partial-page data are grouped into multi-page meta-pages by data type before storage by the SSD. Ramdisks and caches for storing each data type in the host DRAM are managed and flushed to the SSD by the VMD driver. Write dates are stored for pages or blocks for management functions. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

Abstract: A flash drive has increased endurance and longevity by reducing writes to flash. An Endurance Translation Layer (ETL) is created in a DRAM buffer and provides temporary storage to reduce flash wear. A Smart Storage Switch (SSS) controller assigns data-type bits when categorizing host accesses as paging files used by memory management, temporary files, File Allocation Table (FAT) and File Descriptor Block (FDB) entries, and user data files, using address ranges and file extensions read from FAT. Paging files and temporary files are never written to flash. Partial-page data is packed and sector mapped by sub-sector mapping tables that are pointed to by a unified mapping table that stores the data-type bits and pointers to data or tables in DRAM. Partial sectors are packed together to reduce DRAM usage and flash wear. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

Abstract: A GNSD Driver coupled to host DRAM, and having a memory manager, a data grouper engine, a data ungrouper engine, a power manager, and a flush/resume manager. The GNSD driver is coupled to a GNSD application, and the host DRAM to a Non-Volatile Memory Device. The GNSD Driver further includes a compression/decompression engine, a de-duplication engine, an encryption/decryption engine, or a high-level error correction code engine. The encryption/decryption engine encrypts according to DES or AES. A method of operating a GNSD Driver and a GNSD application coupled to DRAM of a host, includes coupling: Configuration and Register O/S Settings to the host and the GNSD Application; a data grouper and data ungrouper to the host DRAM and to Upper and a Lower Filter; a power manager and a memory manager to the host; a flush/resume manager to the DRAM; and the DRAM to an SEED SSD.

Abstract: An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. After formation of a memory opening, all surfaces of the memory opening are provided as silicon oxide surfaces by formation of at least one silicon oxide portion. A silicon nitride layer is formed in the memory opening. After formation of a memory stack structure, backside recesses can be formed employing the silicon oxide portions as an etch stop. The silicon oxide portions can be subsequently removed employing the silicon nitride layer as an etch stop. Physically exposed portions of the silicon nitride layer can be removed selective to the memory stack structure. Damage to the outer layer of the memory stack structure can be minimized or eliminated by successive use of etch stop structures. Electrically conductive layers can be subsequently formed in the backside recesses.

Abstract: A GNSD Driver coupled to host DRAM, and having a memory manager, a data grouper engine, a data ungrouper engine, a power manager, and a flush/resume manager. The GNSD driver is coupled to a GNSD application, and the host DRAM to a Non-Volatile Memory Device. The GNSD Driver further includes a compression/decompression engine, a de-duplication engine, an encryption/decryption engine, or a high-level error correction code engine. The encryption/decryption engine encrypts according to DES or AES. A method of operating a GNSD Driver and a GNSD application coupled to DRAM of a host, includes coupling: Configuration and Register O/S Settings to the host and the GNSD Application; a data grouper and data ungrouper to the host DRAM and to Upper and a Lower Filter; a power manager and a memory manager to the host; a flush/resume manager to the DRAM; and the DRAM to an SEED SSD.

Abstract: A controller for a Super Enhanced Endurance Device (SEED) or Solid-State Drive (SSD) increases flash endurance using a DRAM buffer. Host accesses to flash are intercepted by the controller and categorized as data types of paging files, temporary files, meta-data, and user data files, using address ranges and file extensions read from meta-data tables. Paging files and temporary files are optionally written to flash. Full-page and partial-page data are grouped into multi-page meta-pages by data type in the DRAM before storage by lower-level flash devices such as eMMC, UFS, or iSSD. Caches in the DRAM buffer for storing each data type are managed and flushed to the flash devices by the controller. Write dates are stored for pages or blocks for management functions. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

Abstract: A GNSD (Green NAND Solid State Drive) Driver coupled to host DRAM, and having a memory manager, a data grouper engine, a data ungrouper engine, a power manager, and a flush/resume manager. The GNSD driver is coupled to a GNSD application, and the host DRAM to a Non-Volatile Memory Device. The GNSD Driver further includes a compression/decompression engine, a de-duplication engine, an encryption/decryption engine, or a high-level error correction code engine. The encryption/decryption engine encrypts according to DES (Data Encryption Standard) or AES (Advanced Encryption Standard). A method of operating a GNSD Driver and a GNSD application coupled to DRAM of a host, includes coupling: Configuration and Register O/S Settings to the host and the GNSD Application; a data grouper and data ungrouper to the host DRAM and to Upper and a Lower Filter; a power manager and a memory manager to the host; a flush/resume manager to the DRAM; and the DRAM to an (Super Enhanced Endurance Device) SEED SSD (Solid State Drive).

Abstract: A GNSD Driver coupled to host DRAM, and having a memory manager, a data grouper engine, a data ungrouper engine, a power manager, and a flush/resume manager. The GNSD driver is coupled to a GNSD application, and the host DRAM to a Non-Volatile Memory Device. The GNSD Driver further includes a compression/decompression engine, a de-duplication engine, an encryption/decryption engine, or a high-level error correction code engine. The encryption/decryption engine encrypts according to DES or AES. A method of operating a GNSD Driver and a GNSD application coupled to DRAM of a host, includes coupling: Configuration and Register O/S Settings to the host and the GNSD Application; a data grouper and data ungrouper to the host DRAM and to Upper and a Lower Filter; a power manager and a memory manager to the host; a flush/resume manager to the DRAM; and the DRAM to an SEED SSD.

Abstract: A Green NAND SSD Driver (GNSD) driver executes on a host to increase data-retention of flash memory attached to a Super Enhanced Endurance Device (SEED) or Solid-State Drive (SSD). Host accesses to flash are intercepted by the GNSD driver using upper and lower-level filter drivers. A retention-check timer causes a retention routine to be periodically executed. The routine sends high-level commands to the SEED that causes the SEED to refresh either all data or just data blocks with older write dates. Data is refreshed by moving to a new physical block. The retention routine can track write dates of logical blocks and command a SSD to move logical blocks with older write dates. A retention card has a controller that performs the retention routine when not connected to a host, while a SEED power card allows the SEED to refresh data when no host is attached to the SEED.

Abstract: A moveable dispenser assembly including is shown. The dispenser includes a reservoir having bonding adhesive therein including particles and a liquid carrier. The dispenser is moved to provide agitation to the dispenser for mixing the bonding adhesive into a homogeneous mixture of particles and the liquid carrier. An opening at an end of said dispenser dispenses the bonding adhesive onto a bonding location on the workpiece without removing the dispenser from the die attach apparatus. A one controller for sends a control signal that triggers moving of said moveable dispenser assembly for mixing said bonding adhesive before dispensing said volume of bonding adhesive onto said surface of said workpiece. The controller includes logic to control of movements such as oscillations to keep the bonding adhesive well mixed based on a comparing a parameter to be in a predetermined limit or range.