Patents by Inventor Frank Z. Hawrylo

Frank Z. Hawrylo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4214550
    Abstract: An apparatus for depositing one or more layers of a material on a substrate by liquid phase epitaxy includes in a furnace tube a furnace boat having a plurality of wells in its upper surface and a substrate-carrying slide movable through the boat and across the wells to bring the substrate into the wells. Over and along the top surface of the boat is an elongated, hollow support rod which is rotatable about its longitudinal axis. A plurality of cup-shaped containers are mounted on or secured to the support end. The containers are positioned along the support rod 30 that each container is over a separate well in the furnace boat. A thermocouple is within and movable along the support rod.
    Type: Grant
    Filed: May 21, 1979
    Date of Patent: July 29, 1980
    Assignee: RCA Corporation
    Inventor: Frank Z. Hawrylo
  • Patent number: 4203785
    Abstract: A single crystal layer of either cadmium sulfide or an alloy of cadmium sulfide and indium phosphide is epitaxially deposited on a substrate of cadmium sulfide by liquid phase epitaxy using indium as the solvent.
    Type: Grant
    Filed: November 30, 1978
    Date of Patent: May 20, 1980
    Assignee: RCA Corporation
    Inventor: Frank Z. Hawrylo
  • Patent number: 4195308
    Abstract: A body including P type indium phosphide has an ohmic contact thereon of an alloy of by weight 81% to 86% gold (Au), 11% to 14% germanium (Ge) and 2% to 5% zinc (Zn). This contact has a low resistance and good adhesion to the indium phosphide body.
    Type: Grant
    Filed: May 5, 1978
    Date of Patent: March 25, 1980
    Assignee: RCA Corporation
    Inventor: Frank Z. Hawrylo
  • Patent number: 4182995
    Abstract: A laser diode formed of a rectangular parallelopiped body of single crystalline semiconductor material includes regions of opposite conductivity type indium phosphide extending to opposite surfaces of the body. Within the body is a PN junction at which light can be generated. A stripe of a conductive material is on the surface of the body to which the P type region extends and forms an ohmic contact with the P type region. The stripe is spaced from the side surfaces of the body and extends to the end surfaces of the body. A film of germanium is on the portions of the surface of the P type region which is not covered by the conductive stripe. The germanium film serves to conduct heat from the body and forms a blocking junction with the P type region so as to confine the current through the body, across the light generating PN junction, away from the side surfaces of the body.
    Type: Grant
    Filed: March 16, 1978
    Date of Patent: January 8, 1980
    Assignee: RCA Corporation
    Inventor: Frank Z. Hawrylo