Patents by Inventor Frank Zygmunt Hawrylo

Frank Zygmunt Hawrylo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metallized device
    Patent number: 4097636
    Abstract: A diamond body and an oxide substrate are simultaneously sputter-etched such that the diamond body is cleaned and a layer of the sputtered oxide is deposited on the clean surface of the diamond body, then a metallic layer is deposited on the oxide layer. This provides a metallized diamond body whose metallic layer will adhere to the body.
    Type: Grant
    Filed: June 18, 1975
    Date of Patent: June 27, 1978
    Assignee: RCA Corporation
    Inventors: Frank Zygmunt Hawrylo, Henry Kressel
  • Electroluminescent semiconductor device with passivation layer
    Patent number: 4095011
    Abstract: A semiconductor device has a body of a semiconductor material wherein arsenic, As, is a constituent component of the material. A passivation layer of a material selected from the group consisting of arsenic sulfide, As.sub.2 S.sub.3, arsenic selenide, As.sub.2 Se.sub.3, and arsenic telluride, As.sub.2 Te.sub.3, is on surfaces of the body.
    Type: Grant
    Filed: June 21, 1976
    Date of Patent: June 13, 1978
    Assignee: RCA Corp.
    Inventors: Frank Zygmunt Hawrylo, Henry Kressel
  • Semiconductor ohmic contact
    Patent number: 4024569
    Abstract: A semiconductor device has one surface of P type conductivity material having a wide energy bandgap and a large crystal lattice parameter. Applied to the P type surface of the semiconductor device is a degenerate region of semiconductor material, preferably a group III-V semiconductor material, having a narrower energy bandgap. The degenerate region is doped with tin to increase the crystal lattice of the region to more closely approximate the crystal lattice of the one surface of the semiconductor device. The degenerate region is compensatingly doped with a P type conductivity modifier. An electrical contact is applied to one surface of the degenerate region forming an ohmic contact with the semiconductor device.
    Type: Grant
    Filed: January 8, 1975
    Date of Patent: May 17, 1977
    Assignee: RCA Corporation
    Inventors: Frank Zygmunt Hawrylo, Henry Kressel
  • Ohmic contact
    Patent number: 3984261
    Abstract: A contact of an indium gallium arsenide alloy forms an ohmic contact with a body of n-type or p-type single crystal gallium arsenide of a resistivity of 1 ohm-cm or greater. The method for forming the contact utilizes a low temperature range. This low temperature range lessens the amount of surface disassociation and aids in the prevention of contamination of the body of gallium arsenide.
    Type: Grant
    Filed: December 15, 1975
    Date of Patent: October 5, 1976
    Assignee: RCA Corporation
    Inventor: Frank Zygmunt Hawrylo
  • Metallized device and method of fabrication
    Patent number: 3945902
    Abstract: A diamond body and an oxide substrate are simultaneously sputter-etched such that the diamond body is cleaned and a layer of the sputtered oxide is deposited on the clean surface of the diamond body, then a metallic layer is deposited on the oxide layer. This provides a metallized diamond body whose metallic layer will adhere to the body.
    Type: Grant
    Filed: July 22, 1974
    Date of Patent: March 23, 1976
    Assignee: RCA Corporation
    Inventors: Frank Zygmunt Hawrylo, Henry Kressel