Abstract: Disclosed herein are organic light emitting diode (OLED) devices and methods of use thereof. In one embodiment, an organic light emitting diode (OLED) device includes an emitting layer including: a host and an emitter, wherein the host exhibits triplet-triplet annihilation up-conversion, wherein the emitter has a band gap and exhibits triplet-triplet annihilation up-conversion, wherein the host and the emitter are different, and wherein the emitter has a concentration of 5% or more in the emitting layer.

Abstract: A structure for emitting light is provided. The structure comprises an emissive layer (EML) positioned between electrodes. The EML is tuned such that emission of a transverse electric (TE) waveguide mode from the EML is promoted. The structure further comprises an optical component for diffracting the TE waveguide mode to emit light from the structure.

Abstract: An exemplary transparent tandem organic solar cell comprises a transparent substrate; a first transparent electrode disposed on a surface of the transparent substrate; and a series of interconnecting organic active layers disposed on a surface of the first transparent electrode. The series of organic interconnecting active layers comprise at least a front sub-cell that blocks ultraviolet wavelengths from passing through the front sub-cell; and a back sub-cell that blocks infrared wavelengths from passing through the back sub-cell. The solar cell further comprises a distributed Bragg reflector disposed on a surface of the back sub-cell, wherein the distributed Bragg reflector reflects unblocked infrared photons at an interface between the back sub-cell and the distributed Bragg reflector.

Abstract: A method of fabricating an all-solution-processed interconnection layer of a multi-junction tandem organic solar cell includes forming a coating of an aqueous poly(3,4-ethylenedioxythiophene) polystyrene sulfonate dispersion liquid on a sub-cell surface of a multi-junction tandem organic solar cell.

Abstract: Disclosed herein are organic light emitting diode (OLED) devices and methods of use thereof. In one embodiment, an organic light emitting diode (OLED) device includes an emitting layer including: a host and an emitter, wherein the host exhibits triplet-triplet annihilation up-conversion, wherein the emitter has a band gap and exhibits triplet-triplet annihilation up-conversion, wherein the host and the emitter are different, and wherein the emitter has a concentration of 5% or more in the emitting layer.

Abstract: Embodiments described herein generally relate to monodisperse nanoparticles that are capable of absorbing infrared radiation and generating charge carriers. In some cases, at least a portion of the nanoparticles are nanocrystals. In certain embodiments, the monodisperse, IR-absorbing nanocrystals are formed according to a method comprising a nanocrystal formation step comprising adding a first precursor solution comprising a first element of the nanocrystal to a second precursor solution comprising a second element of the nanocrystal to form a first mixed precursor solution, where the molar ratio of the first element to the second element in the first mixed precursor solution is above a nucleation threshold.

Abstract: Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. Quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots. A photoconductor structure can be used instead of a phototransistor. The photoconductor can incorporate PbSe or PbS quantum dots. The photoconductor can incorporate organic materials and part of an OLED structure. A detected IR image can be displayed to a user. Organic materials can be used to create an organic light-emitting device.

Abstract: A vertical field-effect transistor is provided, comprising a first electrode, a porous conductor layer formed from a layer of conductive material with a plurality of holes extending through the conductive material disposed therein, a dielectric layer between the first electrode and the porous conductor layer, a charge transport layer in contact with the porous conductor layer, and a second electrode electrically connected to the charge transport layer. A photoactive layer may be provided between the dielectric layer and the first electrode. A method of manufacturing a vertical field-effect transistor may also be provided, comprising forming a dielectric layer and depositing a conductor layer in contact with the dielectric layer, wherein one or more regions of the dielectric layer are masked during deposition such that the conductor layer includes a plurality of pores that extend through the conductor layer.

Abstract: An up-conversion device includes a light detecting device and a light emitting device. The light detecting device includes a first electrode, a first electron transport layer, an infrared (IR) sensitizing layer, a first hole transport layer, and a second electrode. The light detecting device receives a first optical signal at a first wavelength. The light emitting device is formed on the light detecting device. The light emitting device shares the second electrode with the light detecting device, and includes a second hole transport layer, a light emitting layer, a second electron transport layer, and a third electrode. The light emitting device outputs a second optical signal at a second wavelength based on the first optical signal and biasing of the light detecting device and the light emitting device.

Abstract: A photonic conversion device is provided, comprising a photoactive layer, a dielectric layer, a porous conductor layer, and an electron transport layer in contact with the porous conductor layer. A light emitting device may be in contact with the electron transport layer, forming a conversion device with gain. A method of manufacturing a photonic conversion device may also be provided, comprising forming a photoactive layer, forming a dielectric layer over the photoactive layer, and depositing a conductor layer in contact with the dielectric layer, wherein one or more regions of the dielectric layer are masked during deposition such that the conductor layer includes a plurality of pores that extend through the conductor layer.

Abstract: An organic light-emitting diode and a preparation method thereof, a display substrate, and a display device. The organic light-emitting diode includes a double-layer fold structure, the double-layer fold structure includes a first layer and a second layer adjacent to each other, an interface between the first layer and the second layer and a surface of the second layer farther away from the first layer have a fold morphology, a virtrification transition temperature of the first layer is less than a virtrification transition temperature of the second layer, and a thermal expansion coefficient of the first layer is greater than a thermal expansion coefficient of the second layer. In the organic light-emitting diode, a natural and self-assembled fold morphology can be obtained with a double-layer thin film, to replace an external fold structure, and the resulted device has a higher efficiency and a reduced operating voltage.

Abstract: Photovoltaic cells, methods of fabricating photovoltaic cells, and methods of using photovoltaic cells to capture light energy are provided. A photovoltaic cell can include an electron transporting layer, a photoactive layer, and a hole transporting layer. The electron transporting layer can be ultraviolet ozone treated. The photovoltaic cell can have an inverted configuration.

Abstract: A photonic conversion device is provided, comprising a photoactive layer, a dielectric layer, a porous conductor layer, and an electron transport layer in contact with the porous conductor layer. A light emitting device may be in contact with the electron transport layer, forming a conversion device with gain. A method of manufacturing a photonic conversion device may also be provided, comprising forming a photoactive layer, forming a dielectric layer over the photoactive layer, and depositing a conductor layer in contact with the dielectric layer, wherein one or more regions of the dielectric layer are masked during deposition such that the conductor layer includes a plurality of pores that extend through the conductor layer.

Abstract: Embodiments described herein generally relate to monodisperse nanoparticles that are capable of absorbing infrared radiation and generating charge carriers. In some cases, at least a portion of the nanoparticles are nanocrystals. In certain embodiments, the monodisperse, IR-absorbing nanocrystals are formed according to a method comprising a nanocrystal formation step comprising adding a first precursor solution comprising a first element of the nanocrystal to a second precursor solution comprising a second element of the nanocrystal to form a first mixed precursor solution, where the molar ratio of the first element to the second element in the first mixed precursor solution is above a nucleation threshold.

Abstract: The present application discloses an organic light emitting diode base substrate including a support substrate and a light outcoupling layer on the support substrate for enhancing light outcoupling efficiency of an organic light emitting display substrate, the light outcoupling layer having a corrugated surface on a side of the light outcoupling layer distal to the support substrate. The light outcoupling layer including a polymer material having a gradient distribution in a direction from the corrugated surface to the support substrate.

Abstract: Photodetectors, methods of fabricating the same, and methods using the same to detect radiation are described. A photodetector can include a first electrode, a light sensitizing layer, an electron blocking/tunneling layer, and a second electrode. Infrared-to-visible upconversion devices, methods of fabricating the same, and methods using the same to detect radiation are also described. An Infrared-to-visible upconversion device can include a photodetector and an OLED coupled to the photodetector.

Abstract: A vertical field-effect transistor is provided, comprising a first electrode, a porous conductor layer formed from a layer of conductive material with a plurality of holes extending through the conductive material disposed therein, a dielectric layer between the first electrode and the porous conductor layer, a charge transport layer in contact with the porous conductor layer, and a second electrode electrically connected to the charge transport layer. A photoactive layer may be provided between the dielectric layer and the first electrode. A method of manufacturing a vertical field-effect transistor may also be provided, comprising forming a dielectric layer and depositing a conductor layer in contact with the dielectric layer, wherein one or more regions of the dielectric layer are masked during deposition such that the conductor layer includes a plurality of pores that extend through the conductor layer.

Abstract: Embodiments of the invention are directed to an improved device for sensing infrared (IR) radiation with up-conversion to provide an output of electromagnetic radiation having a shorter wavelength than the incident IR radiation, such as visible light. The device comprises an anode, a hole blocking layer to separate an IR sensing layer from the anode, an organic light emitting layer that is separated from the anode by the IR sensing layer, and a cathode. The hole blocking layer assures that when a potential is applied between the anode and the cathode the organic light emitting layer generates electromagnetic radiation only when the IR sensing layer is irradiated with IR radiation.

Abstract: A photodetector has a photoactive layer of semiconducting inorganic nanoparticles positioned between a hole transport electron blocking layer of a first metal oxide and an electron transport hole blocking layer of a second metal oxide. The nanoparticles are responsive to electromagnetic radiation in at least the infrared region of the spectrum. The first metal oxide can be NiO, and the second metal oxide can be ZnO or TiO2. The metal oxide layers render the photodetector stable in air, even in the absence of an encapsulating coating around the photodetector. The photodetector has a P-I-N structure.

Abstract: A layered organic light emitting diode (OLED) device comprises a buckled structure over a portion of the light emitting face to provide improved light output relative to flat OLED devices. The buckled structure has a fine buckling and a gross buckling, which are quasi-periodic. Embodiments of the invention are directed to a method of producing the OLED device comprising a buckled structure, where a transparent substrate coated with a transparent elastomeric layer has a thin metal layer deposited on a portion of the elastomeric layer at an elevated temperature. Upon cooling the metal layer buckles with the formation of the quasi-periodic buckling. Subsequently the metal layer is oxidized to a metal oxide layer that retains the buckling. An OLED with a buckling structure over a portion of the emitting face is constructed on the metal oxide layer and retains the buckling of the metal oxide layer.