Patents by Inventor Frans W. Saris

Frans W. Saris has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ultra-sensitive molecular identifier
    Patent number: 5438194
    Abstract: Samples are directed into a liquid or gas chromatograph, and the output from the liquid or gas chromatograph is directed into the ion source of an accelerator mass spectrometry system so as to provide an ultra-sensitive identifier of molecules in the samples.
    Type: Grant
    Filed: July 30, 1993
    Date of Patent: August 1, 1995
    Assignee: High Voltage Engineering Europa B.V.
    Inventors: Reijer Koudijs, Marcel M. Mulder, Kenneth H. Purser, Frans W. Saris
  • Device and method of manufacturing a device
    Patent number: 5049543
    Abstract: A device comprising semiconductor elements and conductor tracks of an oxidic superconductive material, electrically conductive connections being established between the semiconductor elements and the conductor tracks, is provided with an electrically conductive antidiffusion layer between the semiconductor elements and the conductor tracks. The antidiffusion layer consists of an amorphous alloy of two transition metals, which alloy has a crystallization temperature of at least 900 K. The amorphous alloy has the composition A.sub.x B.sub.1-x, wherein A is selected from Ti, Zr, Hf, Nb and Ta, wherein B is selected from Ir, Pd and Pt, and wherein x has a value from 0.4 to 0.8.
    Type: Grant
    Filed: February 27, 1989
    Date of Patent: September 17, 1991
    Assignee: U.S. Philips Corporation
    Inventors: Gerrit J. Van Der Kolk, Theunis S. Baller, Bernard Dam, Roger De Reus, Frans W. Saris
  • Method of manufacturing a semiconductor device by means of a molecular beam technique
    Patent number: 4554030
    Abstract: A monocrystalline layer of one semiconductor material is grown onto a surface of a monocrystalline semiconductor body by means of molecular beam epitaxy. During such growth, the semiconductor body is kept at such a low temperature that a non-monocrystalline layer is obtained. The non-monocrystalline layer is then converted by a heat treatment into a monocrystalline form. Accordingly, an abrupt junction between the two semiconductor materials is obtained.
    Type: Grant
    Filed: March 2, 1984
    Date of Patent: November 19, 1985
    Inventors: Jan Haisma, Poul K. Larsen, Tim De Jong, Johannes F. Van der Veen, Willem A. S. Douma, Frans W. Saris