Patents by Inventor Franz Bermann

Franz Bermann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7867837
    Abstract: A polysilicon layer provided for a polysilicon electrode (8) is patterned by means of a resist mask (5) and an auxiliary layer (4) made of a material that is suitable as an antireflection layer, the auxiliary layer (4) being provided with lateral hollowed-out recesses in such a way that the polysilicon electrode is formed with rounded edges (7) during etching. The auxiliary layer is preferably produced from a soluble material and with a thickness of 70 nm to 80 nm. A base layer (2) may be provided as a gate dielectric of memory cell transistors and additionally as an etching stop layer.
    Type: Grant
    Filed: January 13, 2006
    Date of Patent: January 11, 2011
    Assignee: Austriamicrosystems AG
    Inventors: Franz Bermann, Günther Koppitsch, Sven Schroeter
  • Publication number: 20090197407
    Abstract: A polysilicon layer provided for a polysilicon electrode (8) is patterned by means of a resist mask (5) and an auxiliary layer (4) made of a material that is suitable as an antireflection layer, the auxiliary layer (4) being provided with lateral hollowed-out recesses in such a way that the polysilicon electrode is formed with rounded edges (7) during etching. The auxiliary layer is preferably produced from a soluble material and with a thickness of 70 nm to 80 nm. A base layer (2) may be provided as a gate dielectric of memory cell transistors and additionally as an etching stop layer.
    Type: Application
    Filed: January 13, 2006
    Publication date: August 6, 2009
    Applicant: austriamicrosystems AG
    Inventors: Franz Bermann, Günther Koppitsch, Sven Schroeter