Abstract: A semiconductor device includes a semiconductor body, a vertical transistor arranged in a first device region of the semiconductor body, and a lateral transistor arranged in a second device region of the semiconductor body. The vertical transistor includes a plurality of drift regions of a first doping type and a plurality of compensation regions of a second doping type complementary to the first doping type. The drift regions and the compensation regions are arranged alternately in a lateral direction of the semiconductor body. The second device region includes a well-like structure of the second doping type surrounding a first semiconductor region of the first doping type. The lateral transistor includes device regions arranged in the first semiconductor region.

Abstract: A plant for producing silicon thin-film solar cells has at least one chamber (1) in which the silicon thin-film is deposited from silicon hydride gas during the production process. The chamber (1) is subsequently cleaned of contaminants by an etching process e.g. with sulfur hexafluoride as the etchant gas. The waste gas formed during the production process and containing silicon hydride is supplied to a burner (6) and subsequently filtered. The waste gas formed during the etching process and containing sulfur hexafluoride is washed with water after having been supplied to a burner. The hydrofluoric acid formed by burning of the sulfur hexafluoride is separated from the washing water.