Patents by Inventor Franz J. Himpsel

Franz J. Himpsel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Epitaxy of high T.sub.C superconductors on silicon
    Patent number: 5593951
    Abstract: An epitaxial structure comprising a silicon containing substrate and a high T.sub.c copper-oxide-based superconducting layer, which may include an intermediate layer between the silicon substrate and the superconductor layer. Epitaxial deposition is accomplished by depositing a superconductor on a (001) surface of silicon in a manner in which the unit cell of the superconductor layer has two out of three of its crystallographic axes rotated 45 degrees with respect to the corresponding axes of the silicon unit cell, the remaining axis of the superconductor unit cell being normal to the Si (001) surface.
    Type: Grant
    Filed: May 18, 1995
    Date of Patent: January 14, 1997
    Assignee: International Business Machines Corporation
    Inventor: Franz J. Himpsel
  • Epitaxy of high T.sub.c superconducting films on (001) silicon surface
    Patent number: 5296458
    Abstract: An epitaxial structure comprising a silicon containing substrate and a high T.sub.c copper-oxide-based superconducting layer, which may include an intermediate layer between the silicon substrate and the superconductor layer. Epitaxial deposition is accomplished by depositing a superconductor on a (001) surface of silicon in a manner in which the unit cell of the superconductor layer has two out of three of its crystallographic axes rotated 45 degrees with respect to the corresponding axes of the silicon unit cell, the remaining axis of the superconductor unit cell being normal to the Si (001) surface.
    Type: Grant
    Filed: June 4, 1992
    Date of Patent: March 22, 1994
    Assignee: International Business Machines Corporation
    Inventor: Franz J. Himpsel