Abstract: A method for producing a main body (33) of an optical element for semiconductor lithography includes: —producing a blank (32), —introducing at least one fluid channel (36.x) into the blank (32), then —producing the main body (33) by shaping the blank (32) onto a mold (42). Furthermore, the disclosure describes a main body (33) of an optical element that includes at least one fluid channel (36.x), the fluid channel (36.x) being embodied such that the distance between the fluid channel (36.x) and the surface (40) of the main body (33) provided for an optically active area (41) varies by less than 1 mm, preferably less than 0.1 mm and particularly preferably less than 0.02 mm.

Abstract: A method for polishing a workpiece in the production of an optical element, in particular for microlithography, wherein a relative movement takes place between a polishing tool (300) and a workpiece surface (110, 120, 210) being machined. A polishing tool surface (215, 315) of the polishing tool (300) is formed by a viscoelastic polishing medium (303), wherein the polishing tool surface has an average diameter which is less than 50% of the average diameter of the workpiece surface being machined. The polishing tool surface during polishing is guided by an overrun distance beyond at least one edge (110a, 110b, 120a, 120b, 210a, 210b) delimiting the workpiece surface being machined, wherein the average diameter of the polishing tool surface is at least twice the overrun distance.

Abstract: A method for polishing a workpiece in the production of an optical element, in particular for microlithography, wherein a relative movement takes place between a polishing tool (300) and a workpiece surface (110, 120, 210) being machined. A polishing tool surface (215, 315) of the polishing tool (300) is formed by a viscoelastic polishing medium (303), wherein the polishing tool surface has an average diameter which is less than 50% of the average diameter of the workpiece surface being machined. The polishing tool surface during polishing is guided by an overrun distance beyond at least one edge (110a, 110b, 120a, 120b, 210a, 210b) delimiting the workpiece surface being machined, wherein the average diameter of the polishing tool surface is at least twice the overrun distance.

Abstract: A lithography machine includes an optical element, an interface coupled to the optical element, and a component which is separate from the interface. The interface is directly connected to the optical element. The optical element includes an engaging section. The component has a counter engaging section configured to engage with the engaging section of the optical element to connect the component form-fittingly and/or force-fittingly to the optical element.

Abstract: A method for the zonal polishing of a workpiece includes using a polishing tool to guide a structured polishing pad over the surface of workpiece to remove material from the workpiece. A structured polishing pad includes a structuring adapted to the movement of a polishing tool.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A lithography machine includes an optical element, an interface coupled to the optical element, and a component which is separate from the interface. The interface is directly connected to the optical element. The optical element includes an engaging section. The component has a counter engaging section configured to engage with the engaging section of the optical element to connect the component form-fittingly and/or force-fittingly to the optical element.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A method for producing an optical element includes: providing a substrate (102), applying a layer system (103), wherein an optically effective surface (101) is formed and wherein the layer system has a layer (104) that is thermally deformable for manipulating the geometric shape of the optically effective surface, and applying a temperature field to the optical element while at least regionally heating the thermally deformable layer to above a specified operating temperature of the optical system. The thermally deformable layer is configured such that a deformation that is induced when the temperature field is applied is at least partially maintained after the optical element has cooled. Also disclosed is an optical element (400) that has an optically effective surface (401), a substrate (402), and a layer system (403) that has a reflection layer system (406), which includes a shape-memory alloy.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A mirror (1) for EUV lithography includes a substrate (2) and a reflective coating (3, 4). The reflective coating has a first group (3) of layers (3a, 3b) and a second group (4) of layers (4a, 4b), wherein the first group and second group of layers (3a, 3b; 4a, 4b) reflect radiation having a used wavelength between 5 nm and 30 nm. The first group of layers is arranged between the substrate and the second group of layers, and a decoupling coating (6) is arranged between the first group and second group of layers, said decoupling coating optically decoupling the second group of layers from the first group of layers by preventing the radiation having the used wavelength from reaching the first group of layers. The reflective coating preferably has a correction layer (5) having a layer thickness variation for correcting the surface form of the mirror.

Abstract: A method for producing an optical element includes: providing a substrate (102), applying a layer system (103), wherein an optically effective surface (101) is formed and wherein the layer system has a layer (104) that is thermally deformable for manipulating the geometric shape of the optically effective surface, and applying a temperature field to the optical element while at least regionally heating the thermally deformable layer to above a specified operating temperature of the optical system. The thermally deformable layer is configured such that a deformation that is induced when the temperature field is applied is at least partially maintained after the optical element has cooled. Also disclosed is an optical element (400) that has an optically effective surface (401), a substrate (402), and a layer system (403) that has a reflection layer system (406), which includes a shape-memory alloy.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A mirror including a substrate and a reflective coating that includes a first group of layers and a second group of layers arranged between the substrate and the first group of layers. Both the first and second groups of layers include a plurality of alternating first material layers and second material layers, arranged one above another. The refractive index of the first material for radiation in the range of 5-30 nm is greater than the refractive index of the second material in that wavelength range. The first group of layers is configured to have a number of layers that is greater than 20, such that, upon irradiation with radiation having a wavelength in the range of 5-30 nm, less than 20% of the radiation reaches the second group of layers, which has a layer thickness variation for correcting the surface form of the mirror.

Abstract: A mirror (1) for EUV lithography includes a substrate (2) and a reflective coating (3, 4). The reflective coating has a first group (3) of layers (3a, 3b) and a second group (4) of layers (4a, 4b), wherein the first group and second group of layers (3a, 3b; 4a, 4b) reflect radiation having a used wavelength between 5 nm and 30 nm. The first group of layers is arranged between the substrate and the second group of layers, and a decoupling coating (6) is arranged between the first group and second group of layers, said decoupling coating optically decoupling the second group of layers from the first group of layers by preventing the radiation having the used wavelength from reaching the first group of layers. The reflective coating preferably has a correction layer (5) having a layer thickness variation for correcting the surface form of the mirror.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.