Abstract: In a cooled high-power semiconductor device, the cooling is improved as a result of the fact that contact filaments (3a,b) which are arranged in brush form and which form cooling channels (11a,b) between them through which a coolant flows make contact with the semiconductor substrate (1) by a materially continuous joint.

Abstract: Production of a wire-shaped ceramic high-temperature superconductor based on (Y,SE)Ba.sub.2 Cu.sub.3 O.sub.6.5+y with SE=rare earth metal and 0<y<1, in which 80 to 95% by weight of an ultra-fine grained powder (1) of globulitic particles having a maximum diameter of 1 .mu.m are processed with 0.5 to 3% by weight of a powder (3) of needle- and plate-shaped particles having a length of 10 to 50 .mu.m and 4 to 20% by weight of an organic binder with solvent (5) to form a highly viscous slip (7) and is extruded to form a strand (10) having longitudinally oriented needle- and plate-shaped particles and this is dried in air, calcined and sintered to form a fiber (13).

Abstract: In a fast power semiconductor circuit with a gate turn-off component in the form of a large-area semiconductor substrate (9) and a drive circuit, which is connected to gate and cathode of the component and generates a current pulse suitable for turning off the component, a low-inductive connection is realized between component and drive circuit by a stripline (28) in the form of a metal-laminated plastic film.The upper metallization (1) of the stripline (28) serves in this case essentially as feed to the cathode of the component, the lower metallization (3) serves essentially as feed to the gate.

Abstract: In a method for the firm bonding at elevated temperatures of thin, large-area wafers of different thermal expansion the deformations of the laminar bond occurring later during cooling are at least partially compensated by an appropriate pre-deformation in the opposite direction. An apparatus for conducting the method uses the different thermal expansion of a housing (1) and a ring-shaped thermal expansion element (3) to produce the pre-deformation.

Abstract: In a method for manufacturing an alloy contact between a wafer-shaped semiconductor substrate (4) and a metal contact wafer (6) a material bond for which the alloy layer reaches only slightly into the interior of the semiconductor substrate (4) is achieved by individually heating the layer arrangement of semiconductor substrate (4) and contact wafer (6) and by means of thermal radiation in a vacuum and by using panel heating elements (13, 17) whose area is larger than the area of the layer arrangement.

Abstract: In a method for the firm bonding at elevated temperatures of thin, large-area wafers of different thermal expansion the deformations of the laminar bond occurring later during cooling are at least partially compensated by an appropriate pre-deformation in the opposite direction. An apparatus for conducting the method uses the different thermal expansion of a housing (1) and a ring-shaped thermal expansion element (3) to produce the pre-deformation.