Patents by Inventor Franz Koeck
Franz Koeck has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220336589Abstract: Electronic devices and more particularly diamond-based electronic devices and corresponding contact structures are disclosed. Electrical contact structures to diamond layers, including n-type, phosphorus doped single-crystal diamond are disclosed. In particular, electrical contact structures are formed through an arrangement of one or more nanostructured carbon layers with high nitrogen incorporation that are provided between metal contacts and n-type diamond layers in diamond-based electronic devices. Nanostructured carbon layers may be configured to mitigate reduced phosphorus incorporation in n-type diamond layers, thereby providing low specific contact resistances for corresponding devices. Diamond p-i-n diodes for direct electron emission applications are also disclosed that include electrical contact structures with nanostructured carbon layers.Type: ApplicationFiled: July 1, 2022Publication date: October 20, 2022Applicant: Arizona Board of Regents on behalf of Arizona State UniversityInventors: Franz A. Koeck, Robert Nemanich
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Patent number: 11380763Abstract: Electronic devices and more particularly diamond-based electronic devices and corresponding contact structures are disclosed. Electrical contact structures to diamond layers, including n-type, phosphorus doped single-crystal diamond are disclosed. In particular, electrical contact structures are formed through an arrangement of one or more nanostructured carbon layers with high nitrogen incorporation that are provided between metal contacts and n-type diamond layers in diamond-based electronic devices. Nanostructured carbon layers may be configured to mitigate reduced phosphorus incorporation in n-type diamond layers, thereby providing low specific contact resistances for corresponding devices. Diamond p-i-n diodes for direct electron emission applications are also disclosed that include electrical contact structures with nanostructured carbon layers.Type: GrantFiled: April 28, 2020Date of Patent: July 5, 2022Assignee: Arizona Board of Regents on behalf of Arizona State UniversityInventors: Franz A. Koeck, Robert Nemanich
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Current generation from radiation with diamond diode-based devices for detection or power generation
Patent number: 11063162Abstract: Diamond diode-based devices are configured to convert radiation energy into electrical current, useable for sensing (i.e., detection) or delivery to a load (i.e., energy harvesting). A diode-based detector includes an intrinsic diamond layer arranged between p-type diamond and n-type diamond layers, with the detector further including at least one of (i) a boron containing layer arranged proximate to the n-type and/or the intrinsic diamond layers, or (ii) an intrinsic diamond layer thickness in a range of 10 nm to 300 microns. A diode-based detector may be operated in a non-forward biased state, with a circuit used to transmit a current pulse in a forward bias direction to reset a detection state of the detector. An energy harvesting device may include at least one p-i-n stack (including an intrinsic diamond layer between p-type diamond and n-type diamond layers), with a radioisotope source arranged proximate to the at least one p-i-n stack.Type: GrantFiled: October 14, 2019Date of Patent: July 13, 2021Assignee: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITYInventors: Jason M Holmes, Franz A Koeck, Manpuneet Benipal, Ricardo O Alarcon, Stephen Goodnick, Anna Zaniewski, Robert Nemanich -
Publication number: 20200343344Abstract: Electronic devices and more particularly diamond-based electronic devices and corresponding contact structures are disclosed. Electrical contact structures to diamond layers, including n-type, phosphorus doped single-crystal diamond are disclosed. In particular, electrical contact structures are formed through an arrangement of one or more nanostructured carbon layers with high nitrogen incorporation that are provided between metal contacts and n-type diamond layers in diamond-based electronic devices. Nanostructured carbon layers may be configured to mitigate reduced phosphorus incorporation in n-type diamond layers, thereby providing low specific contact resistances for corresponding devices. Diamond p-i-n diodes for direct electron emission applications are also disclosed that include electrical contact structures with nanostructured carbon layers.Type: ApplicationFiled: April 28, 2020Publication date: October 29, 2020Applicant: Arizona Board of Regents on behalf of Arizona State UniversityInventors: Franz A. Koeck, Robert Nemanich
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Patent number: 10704160Abstract: Apparatuses and methods are provided for manufacturing diamond electronic devices. The apparatus includes a base comprising a water-block and a cover that at least partially covers the water-block. The apparatus includes a sample stage disposed on the base. The apparatus further includes a sample holder disposed on the sample stage and configured to accept a diamond substrate. The apparatus includes controlled thermal interfaces between water-block, sample stage, sample holder and diamond substrate.Type: GrantFiled: May 10, 2017Date of Patent: July 7, 2020Assignee: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITYInventors: Franz A. Koeck, Robert J. Nemanich
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Publication number: 20200173014Abstract: Apparatuses and methods are provided for manufacturing diamond electronic devices. The apparatus includes a base comprising a water-block and a cover that at least partially covers the water-block. The apparatus includes a sample stage disposed on the base. The apparatus further includes a sample holder disposed on the sample stage and configured to accept a diamond substrate. The apparatus includes controlled thermal interfaces between water-block, sample stage, sample holder and diamond substrate.Type: ApplicationFiled: May 10, 2017Publication date: June 4, 2020Inventors: Franz A. Koeck, Robert J. Nemanich
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CURRENT GENERATION FROM RADIATION WITH DIAMOND DIODE-BASED DEVICES FOR DETECTION OR POWER GENERATION
Publication number: 20200119207Abstract: Diamond diode-based devices are configured to convert radiation energy into electrical current, useable for sensing (i.e., detection) or delivery to a load (i.e., energy harvesting). A diode-based detector includes an intrinsic diamond layer arranged between p-type diamond and n-type diamond layers, with the detector further including at least one of (i) a boron containing layer arranged proximate to the n-type and/or the intrinsic diamond layers, or (ii) an intrinsic diamond layer thickness in a range of 10 nm to 300 microns. A diode-based detector may be operated in a non-forward biased state, with a circuit used to transmit a current pulse in a forward bias direction to reset a detection state of the detector. An energy harvesting device may include at least one p-i-n stack (including an intrinsic diamond layer between p-type diamond and n-type diamond layers), with a radioisotope source arranged proximate to the at least one p-i-n stack.Type: ApplicationFiled: October 14, 2019Publication date: April 16, 2020Inventors: Jason M Holmes, Franz A Koeck, Maitreya Dutta, Manpuneet Benipal, Raghuraj Hathwar, Ricardo O Alarcon, Srabanti Chowdhury, Stephen Goodnick, Anna Zaniewski, Robert Nemanich -
Patent number: 10418475Abstract: A semiconductor structure, device, or vertical field effect transistor is comprised of a drain, a drift layer disposed in a first direction relative to the drain and in electronic communication with the drain, a barrier layer disposed in the first direction relative to the drift layer and in electronic communication with the drain, the barrier layer comprising a current blocking layer and an aperture region, a two-dimensional hole gas-containing layer disposed in the first direction relative to the barrier layer, a gate electrode oriented to alter an energy level of the aperture region when a gate voltage is applied to the gate electrode, and a source in ohmic contact with the two-dimensional hole gas-containing layer. At least one of an additional layer, the drain, the drift region, the current blocking layer, the two-dimensional hole gas-containing layer, and the aperture region comprises diamond.Type: GrantFiled: November 28, 2017Date of Patent: September 17, 2019Assignees: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Srabanti Chowdhury, Maitreya Dutta, Robert Nemanich, Franz Koeck
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Patent number: 10121657Abstract: Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.Type: GrantFiled: May 10, 2016Date of Patent: November 6, 2018Assignee: ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITYInventors: Franz A. Koeck, Srabanti Chowdhury, Robert J Nemanich
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Publication number: 20180151715Abstract: A semiconductor structure, device, or vertical field effect transistor is comprised of a drain, a drift layer disposed in a first direction relative to the drain and in electronic communication with the drain, a barrier layer disposed in the first direction relative to the drift layer and in electronic communication with the drain, the barrier layer comprising a current blocking layer and an aperture region, a two-dimensional hole gas-containing layer disposed in the first direction relative to the barrier layer, a gate electrode oriented to alter an energy level of the aperture region when a gate voltage is applied to the gate electrode, and a source in ohmic contact with the two-dimensional hole gas-containing layer. At least one of an additional layer, the drain, the drift region, the current blocking layer, the two-dimensional hole gas-containing layer, and the aperture region comprises diamond.Type: ApplicationFiled: November 28, 2017Publication date: May 31, 2018Inventors: Srabanti Chowdhury, Maitreya Dutta, Robert Nemanich, Franz Koeck
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Publication number: 20170330746Abstract: Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.Type: ApplicationFiled: May 10, 2016Publication date: November 16, 2017Inventors: FRANZ A. KOECK, SRABANTI CHOWDHURY, ROBERT J. NEMANICH
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Patent number: 7767292Abstract: The invention relates to a fired, fire resistant (refractory) ceramic product.Type: GrantFiled: March 22, 2006Date of Patent: August 3, 2010Assignee: Refractory Intellectual Property GmbH & Co. KGInventors: Boro Djuricic, Bernd Buchberger, Klaus Santowski, Franz Koeck
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Publication number: 20080160279Abstract: The invention relates to a fired, fire resistant (refractory) ceramic product.Type: ApplicationFiled: March 22, 2006Publication date: July 3, 2008Applicant: REFRACTORY INTELLECTUAL PROPERTY GMBH & CO. KGInventors: Boro Djuricic, Bernd Buchberger, Klaus Santowski, Franz Koeck