Patents by Inventor Franz Koehl

Franz Koehl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing a wafer with a monocrystalline silicon carbide layer
    Patent number: 5471946
    Abstract: To produce a large-surface wafer, a monocrystalline SiC layer (4) is grown epitaxially on a monocrystalline Si layer (1) provided with a nucleation layer (3) by carbonization. On the monocrystalline SiC layer (4), a polycrystalline SiC layer (5) is deposited. The Si layer is then etched away, resulting in a wafer consisting of a compound of monocrystalline and polycrystalline SiC layers (4, 5) and meeting the highest demands of semiconductor technology.
    Type: Grant
    Filed: October 13, 1993
    Date of Patent: December 5, 1995
    Assignee: CS Halbleiter-und Solartechnologie GmbH
    Inventors: Christoph Scholz, Franz Koehl, Thomas Weber