Abstract: A method for conveying silicon fragments has the silicon fragments being conveyed over a conveyor surface, which is made from hyperpure silicon. There is a vibrating conveyor, and during the conveying, the sharp edges of the silicon fragments are rounded and mechanical-physical decontamination takes place. The vibrating conveyor has a conveyor surface which is made from hyperpure silicon. A second vibrating conveyor unit has a conveyor surface which is made from hyperpure silicon and has passage openings therethrough.

Abstract: An apparatus for the optoelectronic classification of semiconductor materials, has a separating device 2 and a slide face 3, the angle of the slide face 3 to the horizontal being adjustable, and the separating device 2 and the slide face 3 each having a surface made of the semiconductor material to be separated. There is a radiation source 5, through the beam path of which the material to be classified falls, and a shape recognition device 6, which transmits the shape of the material to be classified to a control unit 7, which controls at least one diverter device 8.

Abstract: A method and device for fragmenting semiconductor material, comprising at least two spaced-apart electrodes, which consist of the semiconductor material which is to be fragmented. Each electrode has a heating device. The electrodes pass high voltage current through the semiconductor material to fragment it. The device eliminates the risk of contanimation of the semiconductor material as compared with conventional methods.

Abstract: A method for the treatment of semiconductor material in a liquid bath has the treatment based upon the occurrence of cavitation being brought about in the liquid bath. The semiconductor material is contacted with a cavitating liquid in order to clean fragments of the semiconductor material and to round fracture edges of the fragments.

Abstract: A method for the contamination-free comminution of semiconductor material cludes an apparatus by which the method is carried out. The method includes creating at least one liquid jet by applying pressure to a liquid and forcing it through a nozzle, and directing the liquid jet against the semiconductor material, so that it impinges on its surface at high velocity. The apparatus includes a container for receiving comminuted semiconductor material, at least one nozzle through which a liquid jet is directed at high velocity against the semiconductor material to be comminuted, a conveyor device for removing the comminuted semiconductor material from the container, means for releasing and interrupting the liquid jet, and means for positioning the nozzle and/or advancing the semiconductor material.

Abstract: A device is provided for treating gases or mixtures of gases at high temptures, such as, for example, for the reaction, known as tetraconversion, of silicon tetrachloride with hydrogen to form trichlorosilane. The device has a heat-insulated housing having gas-inlet and gas-outlet openings and a plurality of resistance heaters disposed in the housing that are directly electrically heated and around or through which the gases to be treated flow. According to a preferred embodiment, the device is also provided with an integrated heat-exchanger unit.

Abstract: Waste gases resulting from the production of silicon in connection with the ormation or decomposition of chlorosilanes, which gases always contain hydrogen chloride, can be worked up without removal of the hydrogen chloride. For this purpose, the waste gases which, after separation from the chlorosilanes, only contain hydrogen and hydrogen chloride, are subjected to combustion with addition of air and, after addition of silicon tetrachloride, the result being highly dispersed SiO.sub.2. The hydrogen chloride then remaining in the gaseous phase is returned to the process stream for production of trichlorosilane.

Abstract: The chlorosilanes contained in the residual gases obtained in the deposit of silicon and in the conversion of silicon tetrachloride are first condensed out in liquid form. The hydrogen chloride present in the residual gases is dissolved in the condensed silicon tetrachloride. The remaining, virtually pure hydrogen is passed back into the process. During the distillation of the condensate, the dissolved hydrogen chloride is removed and can be separated off and reused. The trichlorosilane obtained after the distillation and the silicon tetrachloride can also be reused in the deposition process or the conversion process, respectively.

Abstract: The invention relates to a method and device for making pure semiconductor aterial by thermal decomposition of compounds of the semiconductor material on suitable carrier elements. The quantity and quality of the obtained semiconductor material is increased in accordance with the invention by introducing the compounds to be decomposed into the reactor chamber in at least a partially liquid state through a nozzle having a plurality of discharge openings.

Abstract: A process for working up hydrolyzable and/or water-soluble compounds by ping them in water is provided wherein the compounds are fed into the funnel of a rotating cone of water running down into the tip of the cone, with the water being constantly renewed by a supply at the base of the cone. The process is particularly useful for working up mixtures containing silanes and/or chlorosilanes in silicon deposition plants.

Abstract: A method is provided for the transfer of heat from a source of thermal energy to at least one thermal user or heat consuming apparatus wherein waste water, such as from an industrial process, is used as the heat transfer medium and wherein a portion of the waste water flow is evaporated in an indirect heat exchanger under pressure to yield a mixture of steam and heated liquid waste water. The steam is supplied to an indirect heat exchanger for supplying heat to the heat consuming apparatus and the heated waste water is subsequently vaporized in a plurality of stages by reducing the pressure on the waste water in each stage and by using the steam formed by the vaporization in each stage to supply part of the heat of vaporization for the waste water in the subsequent stage. When the heat requirement of the heat consuming apparatus is reduced, the heat exchanger supplying heat to the heat consuming apparatus may be valved out of the system or the steam flow thereto may be reduced.

Abstract: The invention provides a process and an apparatus for machining silicon r and tubes by abrasion. The risk of fracture of such workpieces during grinding is prevented in this method and apparatus by the workpiece being held vertically in a cylindrical grinding machine in which the individual tools are uniformly arranged around the circumference of the workpiece in such a manner that their contact pressures are mutually substantially compensated.

Abstract: In a device and process for the deposition of pure semiconductor materials, specially silicon, by thermal decomposition of gaseous compounds of said semiconductor materials on carrier bodies heated to decomposition temperatures, wherein the device consists of a metallic base plate, mounting means and electrical connections thereon for heating the carrier bodies, as well as pipe connections for supply and exhaust of said gaseous compounds, and a bell-shaped cover slipped onto the base plate and forming a gas-tight seal therewith, the improvement that the area of the bell-shaped cover facing the reaction space consists of silver or silverplated steel. A removable heating element is used to preheat the carrier bodies and a cylinder disposed about the bell forms therewith a closed annular cooling chamber.

Abstract: In a device and process for the deposition of pure semiconductor materials, specially silicon, by thermal decomposition of gaseous compounds of said semiconductor materials on carrier bodies heated to decomposition temperature, wherein the device consists of a silver plated base plate, mounting means and electrical connections thereon for heating the carrier bodies, as well as pipe connections for supply and exhaust of said gaseous compounds, and a bell-shaped cover slipped onto the base plate and forming a gas-tight seal therewith, the improvement that the area of the bell-shaped cover facing the reaction space consists of silver or silverplated steel.

Abstract: A process for deposition of polycrystalline silicon from the gas phase on ated carrier bodies of carbon, which comprises assembling the carrier bodies from extremely thin flexible graphite foils, heating the bodies to deposition temperature, while contacting them with a gaseous mixture containing a decomposable silicon compound and, if desired, hydrogen, and separating the deposited silicon from the carrier body, after termination of the deposition process, by mechanical means. The polycrystalline silicon can either be deposited in the form of shaped hollow bodies for use as laboratory equipment or in the semiconductor industries, or it may be processed to monocrystalline materials.

Abstract: Process for producing large-size, self-supporting plates of silicon deposd from the gaseous phase on a substrate body, which comprises heating a graphite substrate to deposition temperature of silicon, which is deposited on the substrate from a gaseous compound to which a dopant has been added until a layer of about 200 to 650 .mu.m has formed, subsequently melting 40-100% of this layer from the free surface downward, resolidifying the molten silicon by adjustment of a temperature gradient from the substrate body upward, and finally separating the silicon therefrom. The plates so formed are used primarily for making solar cells.

Abstract: A process for producing large-size, substrate-based semiconductor material of silicon deposited on a substrate body from the gaseous phase, which comprises the steps of heating a substrate body by direct current passage to deposition temperature, contacting said body with a gaseous silicon-containing mixture to which a dopant has been added, until a deposit having a thickness from about 10 to 200 .mu.m has been formed, subsequently melting 80 to 100% of the deposited silicon layer from the free surface downward, and resolidifying the molten silicon by adjustment of a temperature gradient from the substrate body upward. Large-sized plates obtained by cutting up the semiconductor material are used as solar cells.

Abstract: A process for the continuous production of silicon rods or tubes by the dsition of silicon from the gaseous phase on the inner wall of a carrier tube heated to the deposition temperature, in which a cooled, hollow metal cylinder is placed in a reactor having one open end, and a flexible band, substantially resistant to silicon at the deposition temperature, is continuously wound onto the cylinder in an overlapping manner at an angle of pitch from 5.degree. to 40.degree. so as to form the carrier tube for the silicon to be deposited; the tube is continuously drawn off the metal cylinder by a rotary traction movement and the portion of the tube adjacent the metal cylinder and still in the reactor is heated to the deposition temperature of about 1050.degree. to 1250.degree. C, while at the same time the gaseous mixture is passed for decomposition through the tube under a pressure exceeding the external atmospheric pressure by 0.

Abstract: A process for making hollow silicon bodies by decomposition from a gaseous ompound containing silicon and depositing said silicon on heated carrier bodies, which comprises assembling in a decomposition device a number of board-shaped members of silicon to form a hollow carrier body, heating said body to the decomposition temperature of the gaseous compound, introducing the gas into the device whereby it is thermally decomposed, causing the silicon released thereby to become inseparately united with the hollow carrier body, the hollow silicon body so formed being immediately available for use in the semiconductor industries. The invention also comprises the silicon bodies so made.