Patents by Inventor Franz Kreupl
Franz Kreupl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9177995Abstract: The present invention relates to a method for producing a vertical interconnect structure, a memory device and an associated production method, in which case, after the formation of a contact region in a carrier substrate a catalyst is produced on the contact region and a free-standing electrically conductive nanoelement is subsequently formed between the catalyst and the contact region and embedded in a dielectric layer.Type: GrantFiled: August 22, 2012Date of Patent: November 3, 2015Assignee: INFINEON TECHNOLOGIES AGInventors: Martin Gutsche, Franz Kreupl, Harald Seidl
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Patent number: 9034689Abstract: Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air break. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element.Type: GrantFiled: March 21, 2013Date of Patent: May 19, 2015Assignee: SanDisk 3D LLCInventors: Deepak C. Sekar, Franz Kreupl, Peter Rabkin, Chu-Chen Fu
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Patent number: 8987046Abstract: Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air break. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element.Type: GrantFiled: March 15, 2013Date of Patent: March 24, 2015Assignee: SanDisk 3D LLCInventors: Deepak C. Sekar, Franz Kreupl, Raghuveer S. Makala, Peter Rabkin
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Patent number: 8912654Abstract: An integrated circuit with a substrate with a lower and an upper surface is described. A via extends between the upper and the lower surface of the substrate. The via contains a conductive filling material that comprises carbon.Type: GrantFiled: April 11, 2008Date of Patent: December 16, 2014Assignee: Qimonda AGInventors: Franz Kreupl, Harry Hedler
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Patent number: 8772749Abstract: In a first aspect, a metal-insulator-metal (MIM) stack is provided that includes (1) a first conductive layer comprising a silicon-germanium (SiGe) alloy; (2) a resistivity-switching layer comprising a metal oxide layer formed above the first conductive layer; and (3) a second conductive layer formed above the resistivity-switching layer. A memory cell may be formed from the MIM stack. Numerous other aspects are provided.Type: GrantFiled: March 14, 2011Date of Patent: July 8, 2014Assignee: SanDisk 3D LLCInventors: Deepak Chandra Sekar, Franz Kreupl, Raghuveer S. Makala
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Patent number: 8742387Abstract: An integrated circuit includes a memory cell with a resistance changing memory element. The resistance changing memory element includes a first electrode, a second electrode, and a resistivity changing material disposed between the first and second electrodes, where the resistivity changing material is configured to change resistive states in response to application of a voltage or current to the first and second electrodes. In addition, at least one of the first electrode and the second electrode comprises an insulator material including a self-assembled electrically conductive element formed within the insulator material. The self-assembled electrically conductive element formed within the insulator material remains stable throughout the operation of switching the resistivity changing material to different resistive states.Type: GrantFiled: June 25, 2008Date of Patent: June 3, 2014Assignee: Qimonda AGInventors: Thomas Happ, Franz Kreupl, Jan Boris Philipp, Petra Majewski
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Patent number: 8737111Abstract: A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an electric field is applied across the first and second electrodes. An ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.Type: GrantFiled: June 9, 2011Date of Patent: May 27, 2014Assignee: SanDisk 3D LLCInventors: Franz Kreupl, Xiying Costa, James Kai, Raghuveer S. Makala
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Patent number: 8686419Abstract: A memory device in a 3-D read and write memory includes a resistance-changing layer, and a local contact resistance in series with, and local to, the resistance-changing layer. The local contact resistance is established by a junction between a semiconductor layer and a metal layer. Further, the local contact resistance has a specified level of resistance according to a doping concentration of the semiconductor and a barrier height of the junction. A method for fabricating such a memory device is also presented.Type: GrantFiled: February 17, 2011Date of Patent: April 1, 2014Assignee: SanDisk 3D LLCInventors: Franz Kreupl, Deepak C Sekar
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Patent number: 8664657Abstract: A circuit is disclosed. The circuit includes at least one nanostructure and a carbon interconnect formed by a substantially carbon layer, wherein the nanostructure and the carbon interconnect are directly coupled to one another.Type: GrantFiled: October 11, 2005Date of Patent: March 4, 2014Assignee: Qimonda AGInventors: Georg Duesberg, Franz Kreupl, Robert Seidel, Gernot Steinlesberger
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Patent number: 8624293Abstract: A carbon/tunneling-barrier/carbon diode and method for forming the same are disclosed. The carbon/tunneling-barrier/carbon may be used as a steering element in a memory array. Each memory cell in the memory array may include a reversible resistivity-switching element and a carbon/tunneling-barrier/carbon diode as the steering element. The tunneling-barrier may include a semiconductor or an insulator. Thus, the diode may be a carbon/semiconductor/carbon diode. The semiconductor in the diode may be intrinsic or doped. The semiconductor may be depleted when the diode is under equilibrium conditions. For example, the semiconductor may be lightly doped such that the depletion region extends from one end of the semiconductor region to the other end. The diode may be a carbon/insulator/carbon diode.Type: GrantFiled: December 16, 2009Date of Patent: January 7, 2014Assignee: SanDisk 3D LLCInventors: Abhijit Bandyopadhyay, Franz Kreupl, Andrei Mihnea, Li Xiao
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Publication number: 20130234099Abstract: Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air break. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element.Type: ApplicationFiled: March 21, 2013Publication date: September 12, 2013Applicant: SANDISK 3D LLCInventors: Deepak C. Sekar, Franz Kreupl, Raghuveer S. Makala, Peter Rabkin, Chu-Chen Fu, Tong Zhang
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Patent number: 8520424Abstract: A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.Type: GrantFiled: June 9, 2011Date of Patent: August 27, 2013Assignee: SanDisk 3D LLCInventors: Franz Kreupl, Abhijit Bandyopadhyay, Yung-Tin Chen, Chu-Chen Fu, Wipul Pemsiri Jayasekara, James Kai, Raghuveer S. Makala, Peter Rabkin, George Samachisa, Jingyan Zhang
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Patent number: 8503229Abstract: Non-volatile storage elements having a P?/metal floating gate are disclosed herein. The floating gate may have a P? region near the tunnel oxide, and may have a metal region near the control gate. A P? region near the tunnel oxide helps provide good data retention. A metal region near the control gate helps to achieve a good coupling ratio between the control gate and floating gate. Therefore, programming of non-volatile storage elements is efficient. Also, erasing the non-volatile storage elements may be efficient. In some embodiments, having a P? region near the tunnel oxide (as opposed to a strongly doped p-type semiconductor) may improve erase efficiency relative to P+.Type: GrantFiled: June 6, 2011Date of Patent: August 6, 2013Assignee: SanDisk Technologies Inc.Inventors: Sanghyun Lee, Mohan Dunga, Masaaki Higashitani, Tuan Pham, Franz Kreupl
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Patent number: 8487292Abstract: A non-volatile resistance-switching memory element includes a resistance-switching element formed from a metal oxide layer having a dopant which is provided at a relatively high concentration such as 10% or greater. Further, the dopant is a cation having a relatively large ionic radius such as 70 picometers or greater, such as Magnesium, Chromium, Calcium, Scandium or Yttrium. A cubic fluorite phase lattice may be formed in the metal oxide even at room temperature so that switching power may be reduced. The memory element may be pillar-shaped, extending between first and second electrodes and being in series with a steering element such as a diode. The metal oxide layer may be deposited at the same time as the dopant. Or, using atomic layer deposition, an oxide of a first metal can be deposited, followed by an oxide of a second metal, followed by annealing to cause intermixing, in repeated cycles.Type: GrantFiled: July 23, 2010Date of Patent: July 16, 2013Assignee: SanDisk 3D LLCInventors: Deepak C. Sekar, Franz Kreupl
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Patent number: 8471360Abstract: In a first aspect, a method of forming a metal-insulator-metal (“MIM”) stack is provided, the method including: (1) forming a dielectric material having an opening and a first conductive carbon layer within the opening; (2) forming a spacer in the opening; (3) forming a carbon-based switching material on a sidewall of the spacer; and (4) forming a second conductive carbon layer above the carbon-based switching material. A ratio of a cross sectional area of the opening in the dielectric material to a cross sectional area of the carbon-based switching material on the sidewall of the spacer is at least 5. Numerous other aspects are provided.Type: GrantFiled: April 14, 2010Date of Patent: June 25, 2013Assignee: SanDisk 3D LLCInventors: Franz Kreupl, Er-Xuan Ping, Jingyan Zhang, Huiwen Xu
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Patent number: 8435831Abstract: Non-volatile storage elements having a reversible resistivity-switching element and techniques for fabricating the same are disclosed herein. The reversible resistivity-switching element may be formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode. A trap passivation material (e.g., fluorine, nitrogen, hydrogen, deuterium) may be incorporated into one or more of the bottom electrode, a metal oxide region, or the top electrode of the reversible resistivity-switching element. One embodiment includes a reversible resistivity-switching element having a bi-layer capping layer between the metal oxide and the top electrode. Fabricating the device may include depositing (un-reacted) titanium and depositing titanium oxide in situ without air break. One embodiment includes incorporating titanium into the metal oxide of the reversible resistivity-switching element.Type: GrantFiled: November 9, 2010Date of Patent: May 7, 2013Assignee: SanDisk 3D LLCInventors: Deepak C. Sekar, Franz Kreupl, Raghuveer Makala, Peter Rabkin
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Patent number: 8420526Abstract: The present invention relates to a method for producing a vertical interconnect structure, a memory device and an associated production method, in which case, after the formation of a contact region in a carrier substrate a catalyst is produced on the contact region and a free-standing electrically conductive nanoelement is subsequently formed between the catalyst and the contact region and embedded in a dielectric layer.Type: GrantFiled: June 24, 2011Date of Patent: April 16, 2013Assignee: Infineon Technologies AGInventors: Martin Gutsche, Franz Kreupl, Harald Seidl
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Patent number: 8395926Abstract: A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME). The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The layers can be provided in a lateral arrangement, such as an end-to-end, face-to-face, L-shaped or U-shaped arrangement. In a set or reset operation of the memory cell, an electric field is applied across the first and second electrodes. An ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element.Type: GrantFiled: June 9, 2011Date of Patent: March 12, 2013Assignee: SanDisk 3D LLCInventors: Franz Kreupl, Ritu Shrivastava
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Patent number: 8395927Abstract: A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has a resistance-switching layer, a conductive intermediate layer, and first and second electrodes at either end of the RSME. A breakdown layer is electrically between, and in series with, the second electrode and the intermediate layer. The breakdown layer maintains a resistance of at least about 1-10 M? while in a conductive state. In a set or reset operation of the memory cell, an ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.Type: GrantFiled: June 9, 2011Date of Patent: March 12, 2013Assignee: SanDisk 3D LLCInventors: Franz Kreupl, Chu-Chen Fu, Yibo Nian
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Patent number: 8354660Abstract: In a first aspect, an MIM stack is provided that includes (1) a first conductive layer comprising a first metal-silicide layer and a second metal-silicide layer; (2) a resistivity-switching layer comprising a metal oxide layer formed above the first conductive layer; and (3) a second conductive layer formed above the resistivity-switching layer. A memory cell may be formed from the MIM stack. Numerous other aspects are provided.Type: GrantFiled: March 14, 2011Date of Patent: January 15, 2013Assignee: SanDisk 3D LLCInventors: Deepak Chandra Sekar, Franz Kreupl, Raghuveer S. Makala