Abstract: An apparatus for treating a surface of an article includes a chamber for receiving an article to be treated. A dispenser dispenses a treatment liquid including inorganic acid onto the article. A tank stores the treatment liquid. An ozone generator communicates with a supply line entering or exiting the tank to mix ozone with the treatment liquid. A cooler cools the treatment liquid to a subambient temperature in a range of 3° C. to less than 20° C. A heater heats a surface of an article to be treated to a temperature at least 30° C. greater than a temperature of the treatment liquid when applied to the article.

Abstract: Improved removal of ion-implanted photoresist in a single wafer front-end wet processing station is achieved by dissolving gaseous ozone into relatively cool inorganic acid, dispensing the acid ozone mixture onto a wafer, and rapidly heating the surface of the wafer to a temperature at least 30° C. higher than the temperature of the acid ozone mixture.

Abstract: Improved removal of ion-implanted photoresist in a single wafer front-end wet processing station is achieved by dissolving gaseous ozone into relatively cool inorganic acid, dispensing the acid ozone mixture onto a wafer, and rapidly heating the surface of the wafer to a temperature at least 30° C. higher than the temperature of the acid ozone mixture.