Abstract: A system and method are described for reducing the current consumption of a microphone component without adversely affecting performance. The system includes a micromechanical microphone capacitor, an acoustically inactive compensation capacitor, an arrangement for applying a high-frequency sampling signal to the microphone capacitor and for applying the inverted sampling signal to the compensation capacitor, an integrating operational amplifier which integrates the sum of the current flow through the microphone capacitor and the current flow through the compensation capacitor as a charge amplifier, a demodulator, which is synchronized with the sampling signal, for the output signal of the integrating operational amplifier, and a low-pass filter which uses the output signal of the demodulator to obtain a microphone signal that corresponds to the changes in capacitance of the microphone capacitor. The sampling signal is composed of a periodic sequence of sampling pulses and pause times.

Abstract: A concept is proposed for a MEMS microphone which may be operated at a relatively low voltage level and still have comparatively high sensitivity. The component according to the present invention includes a micromechanical microphone structure having an acoustically active diaphragm which functions as a deflectable electrode of a microphone capacitor (1), and a stationary acoustically permeable counterelement which functions as a counter electrode of the microphone capacitor (1).

Abstract: A method for producing micromechanical patterns having a relief-like sidewall outline shape or an angle of inclination that is able to be set, the micromechanical patterns being etched out of a SiGe mixed semiconductor layer that is present on or deposited on a silicon semiconductor substrate, by dry chemical etching of the SiGe mixed semiconductor layer; the sidewall outline shape of the micromechanical pattern being developed by varying the germanium proportion in the SiGe mixed semiconductor layer that is to be etched; a greater germanium proportion being present in regions that are to be etched more strongly; the variation in the germanium proportion in the SiGe mixed semiconductor layer being set by a method selected from the group including depositing a SiGe mixed semiconductor layer having varying germanium content, introducing germanium into a silicon semiconductor layer or a SiGe mixed semiconductor layer, introducing silicon into a germanium layer or an SiGe mixed semiconductor layer and/or by therm

Abstract: A hypodermic needle, particularly for injecting a pharmaceutical substance into a human or animal body is disclosed. The needle provides a simple way of improving long-term use in a human or animal body. The hypodermic needle includes a tubular hollow body having a needle tip for introducing the hypodermic needle into the human or animal body, wherein the hollow body has a rigidity which is reducible by the influence of heat and/or moisture.

Abstract: A piezoelectric generator includes a piezoelectric element, a spring element, a mass element, and at least one stop. The piezoelectric element, the spring element, and the mass element form a system which can oscillate. The stop limits the oscillation of the system which can oscillate, at least on one side. The stop is formed from a ductile material or has a coating of a ductile material.

Abstract: A method for manufacturing porous microstructures in a silicon semiconductor substrate, porous microstructures manufactured according to this method, and the use thereof.

Abstract: A bending transducer device for generating electrical energy from deformations, and a circuit module which has such a bending transducer. The bending transducer includes at least one electrically deformable, vibration-capable, electrically conductive support structure, one piezoelectric element and a first contacting element, the conductive support structure having a first restraining area and a second restraining area for restraining the support structure, the piezoelectric element being designed and situated on the support structure in such a way that the piezoelectric element is deformable due to the deformation of the support structure caused by vibrations, and a first electrode for picking up the voltage generated by the deformation of the piezoelectric element is formed and contacted by the support structure, the first contacting element being connected electrically conductively to the support structure outside the first restraining area and the second restraining area.

Abstract: In a method for manufacturing at least one mechanical-electrical energy conversion system including multiple individual parts, and a mechanical-electrical energy conversion, multiple different individual parts are positioned in an assembly device and joined in joining areas assigned to the individual parts in the assembly device, the individual parts including at least one piezoelectric element, one support structure and one seismic mass.

Abstract: A method for manufacturing separated micromechanical components situated on a silicon substrate includes the following steps of a) providing separation trenches on the substrate via an anisotropic plasma deep etching method, b) irradiating the area of the silicon substrate which forms the base of the separation trenches using laser light, the silicon substrate being converted from a crystalline state into an at least partially amorphous state by the irradiation in this area, and c) inducing mechanical stresses in the substrate. In one specific embodiment, cavities are etched simultaneously with the etching of the separation trenches. The etching depths can be controlled via the RIE lag effect.

Abstract: A manufacturing method for a porous microneedle array includes: forming a plurality of porous microneedle arrays, each having at least one microneedle and a porous carrier zone lying beneath it on the face of a semiconductor substrate; forming an interlayer between a non-porous residual layer of the semiconductor substrate located on the back side of the semiconductor substrate and the carrier zone, which has greater porosity than the carrier zone; detaching the residual layer from the carrier zone by breaking up the interlayer; and separating the microneedle arrays into corresponding chips.

Abstract: An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450 C is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.

Abstract: A method for manufacturing a micropump, which may be for the metered delivery of insulin, multiple layers being situated on the front side of a first carrier layer, which has a front side and a rear side, and microfluidic functional elements being formed by structuring at least one of the layers. It is provided that the structuring of the at least one layer for manufacturing all microfluidic functional elements is exclusively performed by front side structuring. Furthermore, a micropump is disclosed.

Abstract: A method for producing a capping wafer for a sensor having at least one cap includes: production of a contacting via extending through the wafer, and, temporally subsequent thereto, filling of the contacting via with an electrically conductive material.

Abstract: A layer system is described including a silicon layer and a passivation layer which is applied at least regionally to the silicon layer's surface, the passivation layer having a first, at least largely inorganic partial layer and a second partial layer, the second partial layer being made of an organic compound including silicon or containing such a material. In particular, the second partial layer is structured in the form of a “self-assembled monolayer.” Furthermore, a method is described for creating a passivation layer on a silicon layer, a first, inorganic partial layer being created on the silicon layer and a second partial layer, containing an organic compound including silicon or being made thereof, being created at least in certain areas on the first partial layer. Both partial layers form the passivation layer. The described layer system or the described method is particularly suited for creating self-supporting structures in silicon.

Abstract: A method and a plasma system are provided for anisotropically etching structures into a substrate positioned in an etching chamber, e.g., structures defined using an etching mask in a silicon substrate, using a plasma. For this purpose, the etching chamber is supplied at least intermittently with an etching gas and at least intermittently with a passivation gas, the passivation gas being supplied to the etching chamber in cycles having a time period between 0.05 second and 1 second. In the plasma system, in addition to a plasma source, via which the plasma acting on the substrate may be produced, an arrangement is provided for at least temporary supply of the etching gas and at least temporary supply of the passivation gas to the etching chamber, which arrangement is designed in such a way that the passivation gas may be supplied to the etching chamber in cycles having a time period between 0.05 second and 1 second.

Abstract: A micromechanical component having a conductive substrate, an elastically deflectable diaphragm including at least one conductive layer, which is provided over a front side of the substrate, the conductive layer being electrically insulated from the substrate, a hollow space, which is provided between the substrate and the diaphragm and is filled with a medium, and a plurality of perforation openings, which run under the diaphragm through the substrate, the perforation openings providing access to the hollow space from a back surface of the substrate, so that a volume of the medium located in the hollow space may change when the diaphragm is deflected. Also described is a corresponding manufacturing method.

Abstract: A method and a device suitable for implementing this method for etching a substrate (10), a silicon body in particular, using an inductively coupled plasma (14) are proposed. For this purpose, a radio-frequency electromagnetic alternating field is generated with an ICP source (13), the alternating field generating an inductively coupled plasma (14) of reactive particles in a reactor (15). The inductively coupled plasma (14) arises by the action of the radio-frequency electromagnetic alternating field on a reactive gas. Furthermore, a device is provided with which a plasma power injected into the inductively coupled plasma (14) via the radio-frequency electromagnetic alternating field with the ICP source (13) is capable of being pulsed so that at least from time to time a pulsed radio-frequency power can be injected into the inductively coupled plasma (14) as a pulsed radio-frequency power.

Abstract: Additional variants of the method of etching structures into an etching body, in particular recesses in a silicon body that are laterally defined in a precise manner by an etching mask, using a plasma, is described. In addition, the use of this method in the introduction of structures, in particular trenches having a high aspect ratio, into a dielectric layer or a dielectric base body and in a layer of silicon is described, isotropic underetching and/or isotropic, sacrificial-layer etching, in particular using fluorine radicals or a highly oxidizing fluorine compound such as ClF3, being performed after the production of the structures in at least some areas in the case of the layer made of silicon.

Abstract: A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClF3 and/or ClF5, a gas selected from the group including Cl2 and/or HCl being added to the etching gas.

Abstract: A micromechanical component, having a substrate and a functional element, the functional element having a functional surface which has an anti-adhesion layer, that has been applied at least in regions, for reducing the surface adhesion forces, and in which the anti-adhesion layer is stable to a temperature of more than 800° C.