Patents by Inventor Franz M. Geiger

Franz M. Geiger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240389875
    Abstract: Energy harvesting devices and methods for converting the mechanical energy of a flowing ionic solution, such as rainwater or seawater, into electric energy are provided. The energy harvesting devices include an electric current generating device that includes a metal layer and an amphoteric metal oxide film disposed over a surface of the metal layer. By moving an electric double layer across the surface of the amphoteric metal oxide film, an electric current is generated in the metal layer.
    Type: Application
    Filed: August 7, 2024
    Publication date: November 28, 2024
    Inventors: Mavis D. Boamah, Franz M. Geiger, Thomas F. Miller, III, Jeongmin Kim
  • Patent number: 12097015
    Abstract: Energy harvesting devices and methods for converting the mechanical energy of a flowing ionic solution, such as rainwater or seawater, into electric energy are provided. The energy harvesting devices include an electric current generating device that includes a metal layer and an amphoteric metal oxide film disposed over a surface of the metal layer. By moving an electric double layer across the surface of the amphoteric metal oxide film, an electric current is generated in the metal layer.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: September 24, 2024
    Assignees: Northwestern University, California Institute of Technology
    Inventors: Mavis D. Boamah, Franz M. Geiger, Thomas F. Miller, III, Jeongmin Kim
  • Patent number: 11375912
    Abstract: Energy harvesting devices and methods for converting the mechanical energy of a flowing ionic solution, such as rainwater or seawater, into electric energy are provided. The energy harvesting devices include an electric current generating device that includes a metal layer and an amphoteric metal oxide film disposed over a surface of the metal layer. By moving an electric double layer across the surface of the amphoteric metal oxide film, an electric current is generated in the metal layer.
    Type: Grant
    Filed: July 28, 2020
    Date of Patent: July 5, 2022
    Assignee: Northwestern University
    Inventors: Mavis D. Boamah, Franz M. Geiger
  • Publication number: 20220038032
    Abstract: Energy harvesting devices and methods for converting the mechanical energy of a flowing ionic solution, such as rainwater or seawater, into electric energy are provided. The energy harvesting devices include an electric current generating device that includes a metal layer and an amphoteric metal oxide film disposed over a surface of the metal layer. By moving an electric double layer across the surface of the amphoteric metal oxide film, an electric current is generated in the metal layer.
    Type: Application
    Filed: September 17, 2019
    Publication date: February 3, 2022
    Inventors: Mavis D. Boamah, Franz M. Geiger, Thomas F. Miller, III, Jeongmin Kim
  • Publication number: 20200358374
    Abstract: Energy harvesting devices and methods for converting the mechanical energy of a flowing ionic solution, such as rainwater or seawater, into electric energy are provided. The energy harvesting devices include an electric current generating device that includes a metal layer and an amphoteric metal oxide film disposed over a surface of the metal layer. By moving an electric double layer across the surface of the amphoteric metal oxide film, an electric current is generated in the metal layer.
    Type: Application
    Filed: July 28, 2020
    Publication date: November 12, 2020
    Inventors: Mavis D. Boamah, Franz M. Geiger
  • Patent number: 10514585
    Abstract: An apparatus for probing an interface via second harmonic generation (SHG) spectroscopy is provided.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: December 24, 2019
    Assignees: Northwestern University, Battelle Memorial Institute, The Trustees of Columbia University in the City of New York
    Inventors: Franz M. Geiger, Paul E. Ohno, Hong-fei Wang, Kenneth B. Eisenthal
  • Publication number: 20190204712
    Abstract: Methods of generating second harmonic generation (SHG) signals from interfaces formed with, or formed over, a noncentrosymmetric material, e.g., ?-quartz, are provided. The methods make use of the noncentrosymmetric material as an internal phase reference for the determination of a variety of interfacial electrostatic parameters, including interfacial potential, interfacial charge density, and the sign of the interfacial charge (i.e., net positive or net negative).
    Type: Application
    Filed: March 12, 2019
    Publication date: July 4, 2019
    Applicant: Battelle Memorial Institute
    Inventors: Franz M. Geiger, Paul E. Ohno, Hong-fei Wang, Kenneth B. Eisenthal
  • Patent number: 10274807
    Abstract: Methods of generating second harmonic generation (SHG) signals from interfaces formed with, or formed over, a noncentrosymmetric material, e.g., ?-quartz, are provided. The methods make use of the noncentrosymmetric material as an internal phase reference for the determination of a variety of interfacial electrostatic parameters, including interfacial potential, interfacial charge density, and the sign of the interfacial charge (i.e., net positive or net negative).
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: April 30, 2019
    Assignees: Northwestern University, Battelle Memorial Institute, The Trustees of Columbia University in the City of New York
    Inventors: Franz M. Geiger, Paul E. Ohno, Hong-fei Wang, Kenneth B. Eisenthal
  • Publication number: 20180164657
    Abstract: Methods of generating second harmonic generation (SHG) signals from interfaces formed with, or formed over, a noncentrosymmetric material, e.g., ?-quartz, are provided. The methods make use of the noncentrosymmetric material as an internal phase reference for the determination of a variety of interfacial electrostatic parameters, including interfacial potential, interfacial charge density, and the sign of the interfacial charge (i.e., net positive or net negative).
    Type: Application
    Filed: December 7, 2017
    Publication date: June 14, 2018
    Inventors: Franz M. Geiger, Paul E. Ohno, Hong-fei Wang, Kenneth B. Eisenthal
  • Patent number: 9850340
    Abstract: Ring-opening metathesis polymerization of apopinene and related functionalized monomers and corresponding polymer products.
    Type: Grant
    Filed: October 10, 2016
    Date of Patent: December 26, 2017
    Assignee: Northwestern University
    Inventors: Regan J. Thomson, Benjamin F. Strick, Franz M. Geiger, Massimiliano Delferro
  • Patent number: 9738966
    Abstract: Methods of forming chemically pure metal films are provided. The methods use electron beam deposition at a high mean deposition rate to form high purity metal films on deposition substrates. By using a high mean deposition rate, the melting point of the metal to be deposited is reached at the metal source surface during the deposition. As a result, the rate of transfer of impurities present in the metal source to the surface of the deposition substrate is so small that the deposited metal films are substantially free of impurity elements.
    Type: Grant
    Filed: September 3, 2015
    Date of Patent: August 22, 2017
    Assignee: Northwestern University
    Inventors: Franz M. Geiger, Danielle Faurie-Wisniewski
  • Publication number: 20170101488
    Abstract: Ring-opening metathesis polymerization of apopinene and related functionalized monomers and corresponding polymer products.
    Type: Application
    Filed: October 10, 2016
    Publication date: April 13, 2017
    Inventors: Regan J. Thomson, Benjamin F. Strick, Franz M. Geiger, Massimiliano Delferro
  • Publication number: 20160068944
    Abstract: Methods of forming chemically pure metal films are provided. The methods use electron beam deposition at a high mean deposition rate to form high purity metal films on deposition substrates. By using a high mean deposition rate, the melting point of the metal to be deposited is reached at the metal source surface during the deposition. As a result, the rate of transfer of impurities present in the metal source to the surface of the deposition substrate is so small that the deposited metal films are substantially free of impurity elements.
    Type: Application
    Filed: September 3, 2015
    Publication date: March 10, 2016
    Inventors: Franz M. Geiger, Danielle Faurie-Wisniewski