Abstract: A vertical semiconductor device comprises a semiconductor body, a first contact and a second contact, wherein a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a third semiconductor region of a second conductivity type are formed in the semiconductor body in a direction from the first contact to the second contact, wherein a basic doping density of the second semiconductor region is smaller than a doping density of the third semiconductor region, and wherein in the second semiconductor region a semiconductor zone of the second conductivity type is arranged in which the doping density is increased relative to the basic doping density of the second semiconductor region.

Abstract: A main thyristor (1) has a recovery protection which is integrated into a drive thyristor (2) whose n-doped emitter (25) is electrically connected to a main thyristor control terminal (140). Moreover, the p-doped emitter (28) of the drive thyristor (2) is electrically connected to the p-doped emitter (18) of the main thyristor (1). Various optional measures for realizing a recovery protection are provided in this case. A method for producing a thyristor system having a main thyristor and a drive thyristor, the drive thyristor (2) having anode short circuits (211) involves introducing particles (230) into a target region (225) of the semiconductor body (200) of the drive thyristor (2), the distance between the target region (225) and a front side (201) of the semiconductor body (200) opposite to the rear side (202) being less than or equal to the distance between the p-doped emitter (28) and the front side (201).

Abstract: A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, has the method steps of: providing a semiconductor body having a first and a second side and a basic doping of a first conduction type, irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side, carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.

Abstract: A semiconductor component has a first and a second contact-making region, and a semiconductor volume arranged between the first and the second contact-making region. Within the semiconductor volume, it is possible to generate a current flow that runs from the first contact-making region to the second contact-making region, or vice versa. The semiconductor volume and/or the contact-making regions are configured in such a way that the local flow cross-section of a locally elevated current flow, which is caused by current splitting, is enlarged at least in partial regions of the semiconductor volume.