Patents by Inventor Franz Segieth

Franz Segieth has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SILICON SINGLE CRYSTAL AND PROCESS FOR PRODUCING IT
    Publication number: 20080210155
    Abstract: A silicon single crystal which has been produced using the Czochralski method has a <113> orientation.
    Type: Application
    Filed: February 28, 2008
    Publication date: September 4, 2008
    Applicant: SILTRONIC AG
    Inventors: Dirk Dantz, Wilfried Von Ammon, Dirk Zemke, Franz Segieth
  • Silicon single crystal and process for producing it
    Publication number: 20030145780
    Abstract: A silicon single crystal which has been produced using the Czochralski method has a <113 > orientation.
    Type: Application
    Filed: January 27, 2003
    Publication date: August 7, 2003
    Applicant: WACKER SILTRONIC AG
    Inventors: Dirk Dantz, Wilfried Von Ammon, Dirk Zemke, Franz Segieth
  • Device and method for pulling a single crystal
    Patent number: 6153008
    Abstract: Device for pulling a silicon single crystal 1 includes an element 5 which annularly surrounds the single crystal growing at a crystallization boundary; and the element has a face 6 directed at the single crystal. The element surrounds the single crystal substantially level with the crystallization boundary 2 and has the property of reflecting heat radiation radiated by the single crystal and the similar melt or of generating and radiating heat radiation back to the lower part of the crystal close to the crystallization boundary. There is also a method for pulling a silicon single crystal, in which the single crystal is thermally affected using the element surrounding it.
    Type: Grant
    Filed: March 20, 1998
    Date of Patent: November 28, 2000
    Assignee: Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
    Inventors: Wilfried Von Ammon, Hans Olkrug, Erich Dornberger, Franz Segieth
  • Method for pulling a silicon single crystal
    Patent number: 5487354
    Abstract: A method for pulling a silicon single crystal has the single crystal being pulled at a speed defined as maximum pulling speed in the vertical direction with respect to a silicon melt held in a crucible. The value of the maximum pulling speed is approximately proportional to the axial temperature gradient in the growing single crystal.
    Type: Grant
    Filed: December 5, 1994
    Date of Patent: January 30, 1996
    Assignee: Wacker-Chemitronic Gesellschaft fuer Eletronik-Grundstoffe mbH
    Inventors: Wilfried von Ammon, Erich Dornberger, Hans Oelkrug, Peter Gerlach, Franz Segieth
  • Process for reducing the oxygen incorporation into a single crystal of silicon
    Patent number: 5477808
    Abstract: A process and an apparatus reduces the oxygen incorporation into a single crystal of silicon which is drawn by the Czochralski method. If a molding is immersed at least temporarily in the melt between the single crystal and the crucible wall during drawing of the single crystal, the oxygen content of the single crystal is reduced compared with the oxygen content of a single crystal which has been drawn without the use of the molding.
    Type: Grant
    Filed: February 28, 1994
    Date of Patent: December 26, 1995
    Assignee: Wacker-Chemitronic Gesellschaft fuer Elektronik-grundstoffe mbH
    Inventors: Hans Oelkrug, Franz Segieth