Abstract: The invention relates to a device (1) for discharging two or more media with media nozzles (15, 25, 35) in which each media nozzle is located on a media arm (10, 20, 30), with a suspension device for each media arm, so that the media arms can perform pivoting movements separately from one another around same axis (Z). Further, the invention relates to a unit for treating in each case a disk-shaped object (2) with at least two media, with a carrier for holding the disk-shaped object.

Abstract: In a chuck (1) for disk-like objects (silicon wafers), there are several lifting devices with respect to surface (4) of chuck (1) that faces toward the object, where the lifting devices are designed as, e.g., pegs (2) that are run out vertically with respect to surface (4) of chuck (1) that faces toward the object and can be retracted back into surface (4). By means of pegs (2), the distance between the object and chuck (1) can be increased in order to mount objects on chuck (1) and remove them therefrom, so that, especially when silicon wafers are handled, the spoon-like devices that are used to place these wafers onto receiving trays and remove them therefrom can also be used.

Abstract: The invention refers to a device and a method for dry etching a defined near-edge portion of a surface of a coated wafer (semiconductor disk).

Abstract: In an arrangement for treatment of silicon wafers (4) there is chuck (1) for treatment of silicon wafers (4) which can be caused to turn around its axis (3) via shaft (2). Above the surface of chuck (1) which carries silicon wafer (4) there is hood (5) which does not turn when wafer-shaped article (4) is being treated. Inert gas, preferably nitrogen, is introduced into the interior of hood (12) so that air is displaced from space (12) surrounded by hood (5). In this way formation of spots by oxidation of the silicon comprising the wafer in the presence of water and oxygen is prevented.

Abstract: A process of controlled wet etching of semiconductor wafers having a silicon dioxide layer on each of two surfaces, includes entirely removing the silicon dioxide layer from a top side and selectively removing the silicon dioxide layer from the opposite side bottom in a defined area which extends to the inside from the peripheral edge of the semiconductor wafer using an etching medium which includes hydrofluoric acid or a combination of hydrofluoric acid and ammonium fluoride and at least one carboxylic acid.

Abstract: To prevent dripping of liquid from an outlet opening of a line, a drip suon device is assigned to the end of the line; the drip suction device has a housing which surrounds the end of the line with the formation of a chamber connected to the interior of the line via through openings and negative pressure can be applied to it via another line to suck up liquid residues which remain in the area of outlet opening after the liquid flow through the line is shut off, and a circuit to activate the drip suction device to apply negative pressure to the chamber when the liquid flow through the line is interrupted by a shutoff element assigned to the line.

Abstract: In a chuck (1) for disk-like objects (silicon wafers), there are several ting devices with respect to surface (4) of chuck (1) that faces toward the object, where the lifting devices are designed as, e.g., pegs (2) that are run out vertically with respect to surface (4) of chuck (1) that faces toward the object and can be retracted back into surface (4). By means of pegs (2), the distance between the object and chuck (1) can be increased in order to mount objects on chuck (1) and remove them therefrom, so that, especially when silicon wafers are handled, the spoon-like devices that are used to place these wafers onto receiving trays and remove them therefrom can also be used.

Abstract: In a support for a wafer-shaped object, in particular a silicon wafer, there is an annular nozzle in the surface of the support opposite the wafer-shaped object. The surface of the support includes concentric annular projections for supporting the wafer. Between the projections there is at least one aperture from which a passage extends to a vacuum producing device housed inside the support. As a result of the prevailing vacuum beneath the projections, the object is held in contact with the support and prevented from moving in a direction parallel to the surface, without requiring lateral supports. The compressed gas that creates the vacuum is ejected from the annular nozzle to clean the edges of the wafer-shaped object.

Abstract: In chamber (1) a basket which is formed by ring (3) and retaining fingers (4) is pivotally mounted. By turning the basket, wafer-shaped article (7) which is held by retaining fingers (4) at an axial distance from ring (3) is caused to rotate. Nozzle (10 and 11) from which a treatment fluid can be applied to article (7) is assigned both to upper and lower large surface (9) of article (7).

Abstract: A gripper assembly with gripper fingers (2) which are mounted so that they can be guided and moved radially inward and outward relative to the main body of the assembly. The gripper fingers (2) are biased radially inward by springs. Fitted in the main body (1) is a finger-opening device (20) with a conical body (21) which moves all of the fingers (2) radially outward together against the action of the springs. If the finger-opening device (20) is then retracted, at least some of the fingers (2) come to rest against the edge of the disc-shaped article. If the device (20) is retracted further, the remaining fingers also come to rest, under the action of their associated springs, against the edge of the disc-shaped article. The conical body (21) in the finger-opening device (20) acts on the fingers (2) via guiding elements (12) fitted inside the main body and connected to the fingers (2) by guiding rods (8).

Abstract: A disk-shaped article is held in a freely floating fashion in a state of equilibrium on account of the vacuum produced by a gas exiting from an annular nozzle 12, due to the aerodynamic paradox known as Bernoulli's principle. Above a facing surface of a support 1, the article is retained so securely that it can be treated with a fluid. Cams 45 are provided all around the annular nozzle 12 as lateral stops for the article. These cams 45 are located eccentrically on shafts 44 rotatable on gear wheels 43 in the support 1. The shafts 44 can be turned via the gear wheels 43 by a gear rim 40 received in the support 1 so that rotation of the cams 45 occurs. A space (31, 33) accommodating the gear rim 40 is separated and sealed off with respect to another space (50, 53, 54) through which the compressed gas flows to the nozzle 12. Consequently, the flow of the compressed gas therethrough is not impaired by the cams 45.

Abstract: A support (1, 100) for disk-shaped articles (11), comprises an annular nozzle (8) in a circular surface (9, 10) of the support (1, 100) facing the article (11). The nozzle is fed with compressed gas for the formation of a gas cushion between the support (1) and the disk-shaped article (11). At least one projection (85, 90, 108) in the surface (9, 10) of the support (1, 100) facing the article (11) serves as a rest for the articles. The projection (85, 90, 108) is arranged within the nozzle (8) provided in the surface (9, 10) of the support (1, 100) facing the article (11), at a radial distance outward from the axis (14) of the support (1, 100) but at a distance radially inward from the nozzle (8). The support thus provides a rest for the article (11). The nozzle (8) is so shaped as to direct the gas radially outwardly in all directions from the disk-shaped article (11), thereby to draw the article against the support (1, 100) by the Bernoulli principle.

Abstract: A device is disclosed for etching silicon wafers, with a support (1) for the silicon wafers, an annular nozzle (8) being provided in the surface (9, 10) of this support that faces the silicon wafer (11), the nozzle being chargeable with compressed gas for the formation of a gas cushion between the support (1) and the silicon wafer (11), the gas exiting between the wafer (11) and the support (1) preventing passage of treatment fluid onto the underside of the wafer (11). The support (1) is located within the interior (21) of an annular tank (20) wherein at least two annular ducts (25, 26, 27) are provided which are open toward the interior (21) of this tank. Furthermore, means are included for lifting and for lowering the support (1) with respect to the tank (20) and for setting the support (1) into rotation about its axis (14) which latter is congruent with the central axis of the tank (20).