Abstract: In the high-voltage transistor, which is suitable for an ESD-protection circuit, there is no doped well or at most a portion of a second well (3) of a second conductivity type opposite a first conductivity type under a contact region (4) for the drain between a first well (2) and a semiconductor material of the substrate (1), said semiconductor material being undoped or being doped for the first conductivity type. Said portion has a lower thickness than a thickness which would provide a good insulation of the first well from the substrate and which would provide a high-breakdown voltage.

Abstract: In the high-voltage transistor, which is suitable for an ESD-protection circuit, there is no doped well or at most a portion of a second well (3) of a second conductivity type opposite a first conductivity type under a contact region (4) for the drain between a first well (2) and a semiconductor material of the substrate (1), said semiconductor material being undoped or being doped for the first conductivity type. Said portion has a lower thickness than a thickness which would provide a good insulation of the first well from the substrate and which would provide a high-breakdown voltage.

Abstract: A circuit arrangement for protection against electrostatic discharges comprises a diverting element, which is connected between a first and a second terminal and has a control input, via which the diverting element can be controlled into the conducting state. Moreover, trigger elements are provided, which have a trigger output for outputting a trigger signal in a manner dependent on a voltage between the first and the second terminal. The circuit arrangement furthermore comprises at least one amplifier unit, which is coupled to one of the trigger outputs on the input side and to the control input on the output side.

Abstract: A zener diode circuit includes a semiconductor substrate having an N-doped region and a P-doped region that form a PN junction. The N-doped region and the P-doped region have areas with widths that decrease as the N-doped region and the P-doped region approach the PN junction. The zener diode circuit also includes a transistor that provides current to the zener diode, and circuitry that detects a state of the zener diode.

Abstract: A circuit arrangement for protection against electrostatic discharges comprises a diverting element, which is connected between a first and a second terminal and has a control input, via which the diverting element can be controlled into the conducting state. Moreover, trigger elements are provided, which have a trigger output for outputting a trigger signal in a manner dependent on a voltage between the first and the second terminal. The circuit arrangement furthermore comprises at least one amplifier unit, which is coupled to one of the trigger outputs on the input side and to the control input on the output side.

Abstract: The present invention describes a Zener diode having a semiconductor substrate (1) having an N-doped region (2) and a P-doped region (3), the doped regions (2, 3) forming a lateral PN junction (4) and the mutually facing sides of the doped regions (2, 3) having a width (b) which diminishes toward the particular other doped region (2, 3). In addition, a method for manufacturing the Zener diode as well as a Zener diode circuit are described. The flattened ends of the doped region make it possible to compensate for alignment errors of the masks. The flattened ends of the doped regions and the selection of a symmetrical system make it possible to compensate for alignment errors of the masks.