Abstract: Devices for sampling a plurality of input signals are provided, wherein a sampling device is controlled to sample the input signals in a random order with additional delays. Other embodiments relate to voltage monitoring systems and corresponding methods.

Abstract: High-voltage level-shifter architectures that provide galvanic coupling between low/high-voltage domains while simultaneously enabling high speed operation, low static current consumption and high reliability under a myriad of environmental circumstances including electromagnetic interference as well as process, voltage and temperature variations.

Abstract: High-voltage level-shifter architectures that provide galvanic coupling between low/high-voltage domains while simultaneously enabling high speed operation, low static current consumption and high reliability under a myriad of environmental circumstances including electromagnetic interference as well as process, voltage and temperature variations.

Abstract: Devices for sampling a plurality of input signals are provided, wherein a sampling device is controlled to sample the input signals in a random order with additional delays. Other embodiments relate to voltage monitoring systems and corresponding methods.

Abstract: A component arrangement having an evaluation circuit for detecting wear on connections is disclosed. The component arrangement has the following features: a semiconductor body having at least one semiconductor component which is integrated in the semiconductor body and has at least one first connection zone, a first contact zone which is applied to the semiconductor body and contact-connects the at least one first connection zone in an electrically conductive manner, a contact element which is connected to the contact zone in an electrically conductive manner by means of at least one connection, the at least one contact zone having at least two contact zone sections which are arranged at a distance from one another and are each connected to the contact element in an electrically conductive manner by means of at least one connection, and an evaluation circuit being connected to the two contact zone sections.

Abstract: The invention relates to a component arrangement having the following features: a semiconductor body (10) having at least one semiconductor component which is integrated in the semiconductor body (10) and has at least one first connection zone (13), a first contact zone (21, 22) which is applied to the semiconductor body (10) and contact-connects the at least one first connection zone (13) in an electrically conductive manner, a contact element (32) which is connected to the contact zone (21, 22) in an electrically conductive manner by means of at least one connection (41, 42), the at least one contact zone (21, 22) having at least two contact zone sections (21, 22) which are arranged at a distance from one another and are each connected to the contact element (32) in an electrically conductive manner by means of at least one connection (41, 42), and an evaluation circuit (50) being connected to the two contact zone sections (21, 22).

Abstract: A driver circuit having series-connected high-side and low-side MOS switches with MOS transistors for driving a load, a temperature-limiting circuit and a current-limiting circuit, which is assigned to one of the two MOS transistors. In order to balance power losses between the high-side and low-side MOS switches, provision is made for the gate of the MOS transistor without the current-limiting circuit to be connected to ground via a voltage generator, whose voltage corresponds to a maximum drive voltage for this MOS transistor.

Abstract: The circuit configuration for sensing when a critical temperature of a component has been exceeded makes use of at least one sense transistor which has a temperature-dependent current/voltage characteristic and which is thermally connected to the component. A current source is connected in series with the sense transistor. A circuit device for compensating for parasitic leakage currents at the sense transistor is provided. The circuit device has a measurement transistor and two current mirror circuits. By compensating for leakage currents, the proper operation of the temperature sensor is guaranteed over the entire temperature range and the destruction of the component is prevented.

Abstract: A reference voltage circuit has a bipolar transistor circuit supplying a reference voltage corresponding to a summation voltage formed from a forward voltage of a pn junction through which current flows, and a difference voltage between two forward voltages of pn junctions which are operated with different current densities. The reference voltage circuit includes a calibration device that can be used to change collector currents of the bipolar transistor circuit. This is achieved, in particular, by corrupting the mirroring ratio of a current mirror circuit provided for the bipolar transistor circuit.

Abstract: A comparator circuit with low current consumption for driving a sawtooth generator includes two differential amplifiers connected back to back, which control the bias current of an operational amplifier through a current measuring device and a means for impressing bias current. During normal operation, that is to say outside a switch-over point of the operational amplifier, the means for impressing bias current is supplied by a comparatively small standby current. Near the switch-over point of a sawtooth signal, the bias current of the operational amplifier is increased. Since the bias current source supplies a current pulse only at the switch-over point of the sawtooth signal, but remains switched off for the remainder of the time, the comparator circuit current consumption is minimized.

Abstract: A circuit configuration for triggering a field effect transistor with a source-side load has a capacitor which is connected on one hand through a load path of the field effect transistor to a supply voltage and on the other hand both to a first charging device and to a first controllable switching device. The first switching device is connected between the capacitor and a gate terminal of the field effect transistor. A second charging device acts through a second controllable switching device to charge a gate-to-source capacitor of the field effect transistor. A comparator monitors a voltage at the gate terminal of the field effect transistor and makes the first switching device conducting when a predetermined value is reached.

Abstract: A machine tool has chuck means defining a geometric axis for holding a workpiece and turret means rotatable about an axis of rotation. The turret means includes at least one end surface, a peripheral surface and first fastening means distributed along a circle within a plane extending normally to the axis of the rotation and being adapted to fasten a tool by means of its fastening surface. At least one tool chucking attachment has a fastening surface to be fastened by the first fastening means instead of a tool head. The tool chucking attachment includes at least one second fastening means having fast-locking means for receiving the fastening surface of a tool head.