Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type which has a first surface. A first device region formed in the semiconductor substrate has the first conductivity type and a lateral extent that is less than the lateral extent of the first surface of the semiconductor substrate. The first device region is electrically separated from the semiconductor substrate by an isolation structure. The isolation structure includes a buried layer which is doped with a second conductivity type that opposes the first conductivity type and further includes a first elongate sinker of the second conductivity type. The first elongate sinker extends from the first surface into the semiconductor substrate and is in electrical contact with the buried layer. The semiconductor device further includes a breakdown voltage influencing structure of the second conductivity type that is arranged in the semiconductor substrate and laterally adjacent the buried layer.

Abstract: A floor distribution box adapted for securement in a channelway defined between opposed cells of a corrugated floor structure wherein the channelway has a bottom wall and opposed outwardly inclined side walls having opposed aligned access openings therein. The floor distribution box comprises opposed transverse walls, a top wall having an outlet opening, a bottom wall, and outwardly biased displaceable end walls secured for inward pivotal displacement. An access opening is provided in each of the end walls and is provided with engagement members in the perimeter thereof for engagement in a respective one of the opposed access openings of a channelway. The outward bias provides a snap-fit engagement of the engagement members in the aligned access openings for retention of the box across the channelway.