Patents by Inventor Franz Winterauer

Franz Winterauer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing a ferroelectric layer
    Patent number: 6790676
    Abstract: A method for producing a ferroelectric layer includes preparing a substrate, applying a layer of material, which will be subsequently converted into the ferroelectric layer, and changing the material into the ferroelectric layer by applying an outer electrical field aligned with the direction desired in the ferroelectric material and heat treating the material. By providing a first noble metal electrode on the surface before applying the material that is to become the ferroelectric layer and then subsequently forming a second noble metal electrode on the ferroelectric layer, a ferroelectric storage capacitor can be formed. If the substrate is provided with memory cells, which include at least one transistor for each cell and the above-mentioned ferroelectric storage capacitors, a ferroelectric memory arrangement can be produced.
    Type: Grant
    Filed: December 5, 2002
    Date of Patent: September 14, 2004
    Assignee: Infineon Technologies AG
    Inventors: Hans Cerva, Walter Hartner, Frank Hintermaier, Joachim Hoepfner, Guenther Schindler, Volker Weinrich, Franz Winterauer
  • Method for producing a ferroelectric layer
    Publication number: 20030138977
    Abstract: A method for producing a ferroelectric layer includes preparing a substrate, applying a layer of material, which will be subsequently converted into the ferroelectric layer, and changing the material into the ferroelectric layer by applying an outer electrical field aligned with the direction desired in the ferroelectric material and heat treating the material. By providing a first noble metal electrode on the surface before applying the material that is to become the ferroelectric layer and then subsequently forming a second noble metal electrode on the ferroelectric layer, a ferroelectric storage capacitor can be formed. If the substrate is provided with memory cells, which include at least one transistor for each cell and the above-mentioned ferroelectric storage capacitors, a ferroelectric memory arrangement can be produced.
    Type: Application
    Filed: December 5, 2002
    Publication date: July 24, 2003
    Inventors: Hans Cerva, Walter Hartner, Frank Hintermaier, Joachim Hoepfner, Guenther Schindler, Volker Weinrich, Franz Winterauer