Patents by Inventor Franz Zängl

Franz Zängl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOS transistor and ESD protective device each having a settable voltage ratio of the lateral breakdown voltage to the vertical breakdown voltage
    Patent number: 7202527
    Abstract: A MOS transistor includes a drain zone, a source zone, and a gate electrode. Doping atoms of the first conductivity type are implanted in the region of the drain zone and the source zone by at least two further implantation steps such that a pn junction between the drain zone and a substrate region is vertically shifted and a voltage ratio of the MOS transistor between a lateral breakdown voltage and a vertical breakdown voltage can be set.
    Type: Grant
    Filed: July 29, 2004
    Date of Patent: April 10, 2007
    Assignee: Infineon Technologies AG
    Inventors: Kai Esmark, Harald Gossner, Gunther Mackh, Richard Owen, Franz Zängl
  • Method for producing a MOS transistor and MOS transistor
    Patent number: 6884688
    Abstract: A MOS transistor includes a drain zone, a source zone, and a gate electrode. Doping atoms of the first conductivity type are implanted in the region of the drain zone and the source zone by at least two further implantation steps such that a pn junction between the drain zone and a substrate region is vertically shifted and a voltage ratio of the MOS transistor between a lateral breakdown voltage and a vertical breakdown voltage can be set.
    Type: Grant
    Filed: October 2, 2002
    Date of Patent: April 26, 2005
    Assignee: Infineon Technologies AG
    Inventors: Kai Esmark, Harald Gossner, Gunther Mackh, Richard Owen, Franz Zängl