Patents by Inventor FRAUNHOFER USA

FRAUNHOFER USA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130149327
    Abstract: The present invention provides antigens and vaccines useful in prevention of infection by Yersinia pestis. The present invention provides pharmaceutical compositions of such antigens and/or vaccines. The present invention provides methods for the production of Y. pestis protein antigens in plants, as well as methods for their use in the treatment and/or prevention of Y. pestis infection.
    Type: Application
    Filed: February 25, 2013
    Publication date: June 13, 2013
    Applicant: FRAUNHOFER USA, INC
    Inventor: FRAUNHOFER USA, INC
  • Publication number: 20130101730
    Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.
    Type: Application
    Filed: October 22, 2012
    Publication date: April 25, 2013
    Applicants: FRAUNHOFER USA, BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY
    Inventors: Board of Trustees of Michigan State University, Fraunhofer USA
  • Publication number: 20130069531
    Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.
    Type: Application
    Filed: October 22, 2012
    Publication date: March 21, 2013
    Applicants: FRAUNHOFER USA, BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY
    Inventors: BOARD OF TRUSTEES OF MICHIGAN STATE U, FRAUNHOFER USA