Abstract: Consistent with the present disclosure, a photonic integrated circuit (PIC) is provided that has 2 N channels (N being an integer). The PIC is optically coupled to N optical fibers, such that each of N polarization multiplexed optical signals are transmitted over a respective one of the N optical fibers. In another example, each of the N optical fibers supply a respective one of N polarization multiplexed optical signals to the PIC for coherent detection and processing. A multiplexer and demultiplexer may be omitted from the PIC, such that the optical signals are not combined on the PIC. As a result, the transmitted and received optical signals incur less loss and amplified spontaneous emission (ASE) noise.

Abstract: Consistent with the present disclosure, a photonic integrated circuit (PIC) is provided that has 2 N channels (N being an integer). The PIC is optically coupled to N optical fibers, such that each of N polarization multiplexed optical signals are transmitted over a respective one of the N optical fibers. In another example, each of the N optical fibers supply a respective one of N polarization multiplexed optical signals to the PIC for coherent detection and processing. A multiplexer and demultiplexer may be omitted from the PIC, such that the optical signals are not combined on the PIC. As a result, the transmitted and received optical signals incur less loss and amplified spontaneous emission (ASE) noise.

Abstract: Methods, systems, and apparatus, including a photonic integrated circuit package, including a photonic integrated circuit chip, including a lumped active optical element; an electrode configured to receive an electrical signal, where at least one characteristics of the lumped active optical element is changed based on the electrical signal received by the electrode; a ground electrode; and a bond contact electrically coupled to the electrode; and an interposer bonded to at least a portion of the photonic integrated circuit chip, the interposer including a conductive trace formed on a surface of the interposer, the conductive trace electrically coupled to a source of the electrical signal; a ground trace; and a conductive via bonded with the bond contact of the photonic integrated circuit chip, the conductive via electrically coupled to the conductive trace to provide the electrical signal to the electrode of the photonic integrated circuit chip.

Abstract: A device may include a substrate. The device may include a carrier mounted to the substrate. The device may include a transmitter photonic integrated circuit (PIC) mounted on the carrier. The transmitter PIC may include a plurality of lasers that generate an optical signal when a voltage or current is applied to one of the plurality of lasers. The device may include a first microelectromechanical structure (MEMS) mounted to the substrate. The first MEMS may include a first set of lenses. The device may include a planar lightwave circuit (PLC) mounted to the substrate. The PLC may be optically coupled to the plurality of lasers by the first set of lenses of the first MEMS. The device may include a second MEMS, mounted to the substrate, that may include a second set of lenses, which may be configured to optically couple the PLC to an optical fiber.

Abstract: Consistent with the present disclosure, a compact laser with extended tunability (CLET) is provided that includes multiple segments or sections, at least one of which is curved, bent or non-collinear with other segments, so that the CLET has a compact form factor either as a singular laser or when integrated with other devices. The term CLET, as used herein, refers to any of the laser configurations disclosed herein having mirrors and a bent, angled or curved part, portion or section between such mirrors. If bent, the bent portion is preferably oriented at an angle of at least 30 degrees relative to other portions of the CLET. Alternatively, the curve or bend portion may be distributed over different sections of the CLET over a series of arcs, for example. The waveguide extending between the mirrors is continuous, such that light propagating along the waveguide is not divided or split. The waveguide also constitutes a continuous waveguide path.

Abstract: Consistent with the present disclosure, a compact laser with extended tunability (CLET) is provided that includes multiple segments or sections, at least one of which is curved, bent or non-collinear with other segments, so that the CLET has a compact form factor either as a singular laser or when integrated with other devices. The term CLET, as used herein, refers to any of the laser configurations disclosed herein having mirrors and a bent, angled or curved part, portion or section between such mirrors. If bent, the bent portion is preferably oriented at an angle of at least 30 degrees relative to other portions of the CLET. Alternatively, the curve or bend portion may be distributed over different sections of the CLET over a series of arcs, for example. The waveguide extending between the mirrors is continuous, such that light propagating along the waveguide is not divided or split. The waveguide also constitutes a continuous waveguide path.

Abstract: Consistent with the present disclosure, a compact laser with extended tunability (CLET) is provided that includes multiple segments or sections, at least one of which is curved, bent or non-collinear with other segments, so that the CLET has a compact form factor either as a singular laser or when integrated with other devices. The term CLET, as used herein, refers to any of the laser configurations disclosed herein having mirrors and a bent, angled or curved part, portion or section between such mirrors. If bent, the bent portion is preferably oriented at an angle of at least 30 degrees relative to other portions of the CLET. Alternatively, the curve or bend portion may be distributed over different sections of the CLET over a series of arcs, for example. The waveguide extending between the mirrors is continuous, such that light propagating along the waveguide is not divided or split. The waveguide also constitutes a continuous waveguide path.

Abstract: Disclosed are compositions for anchoring materials in or to concrete or masonry. The compositions preferably comprise alkylacrylate ester monomer and a copolymer of alkylacrylate ester and methacrylic acid monomers, and free-radical catalyst.

Abstract: Disclosed are compositions for anchoring materials in or to concrete or masonry. The compositions preferably comprise alkylacrylate ester monomer and a copolymer of alkylacrylate ester and methacrylic acid monomers, and free-radical catalyst.

Abstract: A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.

Abstract: Disclosed are methods for anchoring materials in or to concrete. The methods preferably comprise delivering to the concrete or masonry, the material to be anchored to the concrete or masonry or both an anchor composition comprising alkylacrylate ester monomer and a copolymer of alkylacrylate ester and methacrylic acid monomers, and free-radical catalyst.

Abstract: The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer of a first conductivity type, an AlGaInP active region of a second conductivity type, and an AlGaInP upper confining layer of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer may be doped with oxygen improve the reliability.

Abstract: A self-regulating flexible heater for automobiles and other vehicles which is comprised of a breathable substrate (10) to which is applied a coating (14) of a conductive material and a coating (12) of positive temperature coefficient material.

Abstract: A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.

Abstract: An active semiconductor device, such as, buried heterostructure semiconductor lasers, LEDs, modulators, photodiodes, heterojunction bipolar transistors, field effect transistors or other active devices, comprise a plurality of semiconductor layers formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III-V layer comprises InAlAs:O or InAlAs:O:Fe.

Abstract: A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.

Abstract: A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.

Abstract: A III-nitride light-emitting structure including a p-type layer, an n-type layer, and a light emitting layer is grown on a growth substrate. The III-nitride light-emitting structure is wafer bonded to a host substrate, then the growth substrate is removed. In some embodiments, a first electrical contact and first bonding layer are formed on the III-nitride light-emitting structure. A second bonding layer is formed on the host substrate. In such embodiments, wafer bonding the III-nitride light emitting structure to the host substrate comprises bonding the first bonding layer to the second bonding layer. After the growth substrate is removed, a second electrical contact may be formed on a side of the III-nitride light-emitting device exposed by removal of the growth substrate.

Abstract: A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.

Abstract: A photonic integrated circuits (PICs), also referred to as opto-electronic integrated circuits (OEICs), and more particularly to a PIC in the form of an optical receiver PIC or RxPIC for use in an optical transport networks. Also, an optical transmitter PIC (TxPIC) is also disclosed in conjunction with an RxPIC in an optical transport network. The chip is cast from an InP wafer and is made from Group III-V elemental materials in the InGaAsP/InP regime with fabrication accomplished through selective metalorganic vapor phase epitaxy (MOVPE) or also known as metalorganic chemical vapor deposition (MOCVD). Integrated on the chip, starting at the input end which is coupled to receive multiplexed optical data signals from an optical transport network is an optical amplifier, an optical demultiplexer, and a plurality of on-chip photodiodes (PDs) each to receive a demultiplexed data signal from the AWG DEMUX for optical-to-electrical signal conversion.