Patents by Inventor Fred AmRhein

Fred AmRhein has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma etch resistant coating and process
    Publication number: 20040255868
    Abstract: A protective coating is provided herein and methods of using the protective coating for susceptors used in semiconductor deposition chambers are described. In the preferred embodiments, CVD chamber equipment, such as a susceptor, is protected from plasma etch cleaning. Prior to CVD of silicon nitride, the chamber equipment is first coated with an emissivity-stabilizing layer, such as silicon nitride. This layer is then superficially oxidized. After repeated cycles of deposited silicon nitride upon different substrates in sequence, the chamber is emptied of wafers and a plasma cleaning process is conducted. Plasma cleaning is preferably selective against the silicon oxynitride protective coating. After the plasma cleaning process, the emissivity-stabilizing layer is reapplied, oxidized, and a plurality of deposition cycles can commence again.
    Type: Application
    Filed: July 6, 2004
    Publication date: December 23, 2004
    Inventors: Fred AmRhein, Christophe Pomarede
  • Plasma etch resistant coating and process
    Patent number: 6825051
    Abstract: A protective coating is provided herein and methods of using the protective coating for susceptors used in semiconductor deposition chambers are described. In the preferred embodiments, CVD chamber equipment, such as a susceptor, is protected from plasma etch cleaning. Prior to CVD of silicon nitride, the chamber equipment is first coated with an emissivity-stabilizing layer, such as silicon nitride. This layer is then superficially oxidized. After repeated cycles of deposited silicon nitride upon different substrates in sequence, the chamber is emptied of wafers and a plasma cleaning process is conducted. Plasma cleaning is preferably selective against the silicon oxynitride protective coating. After the plasma cleaning process, the emissivity-stabilizing layer is reapplied, oxidized, and a plurality of deposition cycles can commence again.
    Type: Grant
    Filed: May 17, 2002
    Date of Patent: November 30, 2004
    Assignee: ASM America, Inc.
    Inventors: Fred AmRhein, Christophe Pomarede
  • Plasma etch resistant coating and process
    Publication number: 20030215963
    Abstract: A protective coating is provided herein and methods of using the protective coating for susceptors used in semiconductor deposition chambers are described. In the preferred embodiments, CVD chamber equipment, such as a susceptor, is protected from plasma etch cleaning. Prior to CVD of silicon nitride, the chamber equipment is first coated with an emissivity-stabilizing layer, such as silicon nitride. This layer is then superficially oxidized. After repeated cycles of deposited silicon nitride upon different substrates in sequence, the chamber is emptied of wafers and a plasma cleaning process is conducted. Plasma cleaning is preferably selective against the silicon oxynitride protective coating. After the plasma cleaning process, the emissivity-stabilizing layer is reapplied, oxidized, and a plurality of deposition cycles can commence again.
    Type: Application
    Filed: May 17, 2002
    Publication date: November 20, 2003
    Inventors: Fred AmRhein, Christophe Pomarede