Patents by Inventor Fred Daniel Gealy

Fred Daniel Gealy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20260190875
    Abstract: A memory device including a memory array comprising a plurality of decks, a respective deck comprising a plurality of memory cells, a respective memory cell comprising a storage element comprising a chalcogenide material; wherein a first deck of the plurality of decks comprises first memory cells with storage elements deposited at a first initial composition of a plurality of elements; and a second deck of the plurality of decks comprises second memory cells with storage elements deposited at a second initial composition of the plurality of elements.
    Type: Application
    Filed: February 25, 2026
    Publication date: July 2, 2026
    Inventors: John M. Nugent, Kumar R. Virwani, Fred Daniel Gealy
  • Patent number: 12588430
    Abstract: A memory device including a memory array comprising a plurality of decks, a respective deck comprising a plurality of memory cells, a respective memory cell comprising a storage element comprising a chalcogenide material; wherein a first deck of the plurality of decks comprises first memory cells with storage elements deposited at a first initial composition of a plurality of elements; and a second deck of the plurality of decks comprises second memory cells with storage elements deposited at a second initial composition of the plurality of elements.
    Type: Grant
    Filed: January 29, 2021
    Date of Patent: March 24, 2026
    Assignee: SK Hynix NAND Product Solutions Corp.
    Inventors: John M. Nugent, Kumar R. Virwani, Fred Daniel Gealy
  • Publication number: 20220246847
    Abstract: A memory device including a memory array comprising a plurality of decks, a respective deck comprising a plurality of memory cells, a respective memory cell comprising a storage element comprising a chalcogenide material; wherein a first deck of the plurality of decks comprises first memory cells with storage elements deposited at a first initial composition of a plurality of elements; and a second deck of the plurality of decks comprises second memory cells with storage elements deposited at a second initial composition of the plurality of elements.
    Type: Application
    Filed: January 29, 2021
    Publication date: August 4, 2022
    Applicant: Intel Corporation
    Inventors: John M. Nugent, Kumar R. Virwani, Fred Daniel Gealy