Abstract: Embodiments of the present invention are generally directed to apparatus and methods for a plasma-processing chamber requiring less maintenance and downtime and possessing improved reliability over the prior art. In one embodiment, the apparatus includes a substrate support resting on a ceramic shaft, an inner shaft allowing for electrical connections to the substrate support at atmospheric pressure, an aluminum substrate support resting on but not fixed to a ceramic support structure, sapphire rest points swaged into the substrate support, and a heating element inside the substrate support arranged in an Archimedes spiral to reduce warping of the substrate support and to increase its lifetime. Methods include increasing time between in-situ cleans of the chamber by reducing particle generation from chamber surfaces. Reduced particle generation occurs via temperature control of chamber components and pressurization of non-processing regions of the chamber relative to the processing region with a purge gas.

Abstract: A method and apparatus are described for inhibiting visual obstruction of the window of a semiconductor etch process chamber by deposition of each byproducts thereon by selectively heating the window surfaces adjacent one edge of the window to thereby form a cool region on the window surfaces adjacent the opposite edge of the window whereby the center of the window will remain substantially clear of such depositions. The apparatus for carrying out the method of the invention comprises a first heat transmitting structure disposed on one surface of an optically transparent window adjacent one edge, and a second heat transmitting structure disposed on the opposite surface of the optically transparent window adjacent the same edge to thereby provide even heating of both surfaces of the window adjacent the one edge, thereby creating a cooler zone on the window surfaces adjacent the opposite edge of the window.