Patents by Inventor Fred Hurkx

Fred Hurkx has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7791108
    Abstract: A transistor comprises a nanowire (22, 22?) having a source (24) and a drain (29) separated by an intrinsic or lowly doped region (26, 28). A potential barrier is formed at the interface of the intrinsic or lowly doped region (26, 28) and one of the source (24) and the drain (29). A gate electrode (32) is provided in the vicinity of the potential barrier such that the height of the potential barrier can be modulated by applying an appropriate voltage to the gate electrode (32).
    Type: Grant
    Filed: January 24, 2007
    Date of Patent: September 7, 2010
    Assignee: NXP B.V.
    Inventors: Fred Hurkx, Prabhat Agarwal