Patents by Inventor Fred L. Roe

Fred L. Roe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7049244
    Abstract: A process for controlling the plasma etch of a silicon dioxide layer at a high etch rate and high selectivity with respect to silicon nitride, particularly in a multilayer structure, by (1) maintaining various portions of the etch chamber at elevated temperatures, and/ox (2) using an etch chemistry having a fluorohydrocarbon gas containing at least as many hydrogen atoms as fluorine atoms, preferably CH2F2 or CH3F.
    Type: Grant
    Filed: August 6, 2001
    Date of Patent: May 23, 2006
    Assignee: Micron Technology, Inc.
    Inventors: David S. Becker, Guy T. Blalock, Fred L. Roe
  • Publication number: 20020000423
    Abstract: A process for controlling the etch of a silicon dioxide layer at a high etch rate and high selectivity with respect to silicon nitride, particularly in a multilayer structure, by maintaining various portions of the etch chamber at elevated temperatures.
    Type: Application
    Filed: August 6, 2001
    Publication date: January 3, 2002
    Applicant: Micron Technologies, Inc.
    Inventors: David S. Becker, Guy T. Blalock, Fred L. Roe
  • Patent number: 6287978
    Abstract: A process for controlling the etch of a silicon dioxide layer at a high etch rate and high selectivity with respect to silicon nitride, particularly in a multilayer structure, by maintaining various portions of the etch chamber at elevated temperatures.
    Type: Grant
    Filed: June 30, 1999
    Date of Patent: September 11, 2001
    Assignee: Micron Technology, Inc.
    Inventors: David S. Becker, Guy T. Blalock, Fred L. Roe
  • Patent number: 6015760
    Abstract: A process for controlling the etch of a silicon dioxide layer at a high etch rate and high selectivity with respect to silicon nitride, particularly in a multilayer structure, by maintaining various portions of the etch chamber at elevated temperatures.
    Type: Grant
    Filed: August 4, 1997
    Date of Patent: January 18, 2000
    Assignee: Micron Technology, Inc.
    Inventors: David S. Becker, Guy T. Blalock, Fred L. Roe
  • Patent number: 5302239
    Abstract: An in situ plasma dry etching process for the formation of atomically sharp tips for use in high resolution microscopes in which i) a mask layer is deposited on a substrate, ii) a photoresist layer is patterned superjacent the mask layer at the sites where the tips are to be formed, iii) the mask is selectively removed by plasma etching, iv) after which the substrate is etched in the same plasma reacting chamber, thereby creating sharp microscope tips.
    Type: Grant
    Filed: May 15, 1992
    Date of Patent: April 12, 1994
    Assignee: Micron Technology, Inc.
    Inventors: Fred L. Roe, Kevin Tjaden
  • Patent number: 5302238
    Abstract: An in situ plasma dry etching process for the formation of automatically sharp cold cathode emitter tips for use in field emission displays in which i) a mask layer is deposited on a substrate, ii) a photoresist layer is patterned superjacent the mask layer at the sites where the emitter tips are to be formed, iii) the mask is selectively removed by plasma etching, iv) after which the substrate is etched in the same plasma reacting chamber, thereby creating sharp electron emitter tips.
    Type: Grant
    Filed: May 15, 1992
    Date of Patent: April 12, 1994
    Assignee: Micron Technology, Inc.
    Inventors: Fred L. Roe, Kevin Tjaden