Abstract: A method of depositing an outer layer (35) on a surface (36) of a reflective optical element (30) for the EUV wavelength range, wherein the depositing is effected in at least one macro cycle (37). The macro cycle (37) includes: at least partly depositing the outer layer (35) with an atomic layer deposition (ALD) process in at least one ALD cycle and partly back-etching the outer layer (35). Also disclosed is a reflective optical element (30) for the extreme ultraviolet (EUV) wavelength range which includes a surface (36) having an outer layer (35), wherein the outer layer (35) is deposited by the above-described method, and to an EUV lithography system having at least one such reflective optical element (30).

Abstract: A method for at least partially removing a contamination layer (24) from an optical surface (14a) of an optical element (14) that reflects EUV radiation includes: performing an atomic layer etching process for at least partially removing the contamination layer (24) from the optical surface (14a), which, in turn, includes: exposing the contamination layer (24) to a surface-modifying reactant (44) in a surface modification step, and exposing the contamination layer (24) to a material-detaching reactant (45) in a material detachment step. The optical element (14) is typically taken, before the atomic layer etching process is performed, from an optical arrangement, in particular from an EUV lithography system, in which the optical surface (14a) of the optical element (14) is exposed to EUV radiation (6), during which the contamination layer (24) is formed.

Abstract: A method for at least partially removing a contamination layer (24) from an optical surface (14a) of an optical element (14) that reflects EUV radiation includes: performing an atomic layer etching process for at least partially removing the contamination layer (24) from the optical surface (14a), which, in turn, includes: exposing the contamination layer (24) to a surface-modifying reactant (44) in a surface modification step, and exposing the contamination layer (24) to a material-detaching reactant (45) in a material detachment step. The optical element (14) is typically taken, before the atomic layer etching process is performed, from an optical arrangement, in particular from an EUV lithography system, in which the optical surface (14a) of the optical element (14) is exposed to EUV radiation (6), during which the contamination layer (24) is formed.

Abstract: An electronic device comprising at least one die stack having at least a first die (D1) comprising a first array of light emitting units (OLED) for emitting light, a second layer (D2) comprising a second array of via holes (VH) and a third die (D3) comprising a third array of light detecting units (PD) for detecting light from the first array of light emitting units (OELD) is provided. The second layer (D2) is arranged between the first die (D1) and the third die (D3). The first, second and third array are aligned such that light emitted from the first array of light emitting units (OLED) passed through the second array of via holes (VH) and is detected by the third array of light detecting units (PD). The first array of light emitting units and/or the third array of light detecting units are manufactured based on standard semiconductor manufacturing processes.

Abstract: An electronic device comprising at least one die stack having at least a first die (D1) comprising a first array of light emitting units (OLED) for emitting light, a second layer (D2) comprising a second array of via holes (VH) and a third die (D3) comprising a third array of light detecting units (PD) for detecting light from the first array of light emitting units (OELD) is provided. The second layer (D2) is arranged between the first die (D1) and the third die (D3). The first, second and third array are aligned such that light emitted from the first array of light emitting units (OLED) passed through the second array of via holes (VH) and is detected by the third array of light detecting units (PD). The first array of light emitting units and/or the third array of light detecting units are manufactured based on standard semiconductor manufacturing processes.

Abstract: A variety of circuits, methods and devices are implemented for radiofrequency amplifiers. According to one such implementation, a radiofrequency amplifier circuit is implemented in a SMD package. The circuit amplifies a radiofrequency signal having a base-band portion and a plurality of carrier signals frequency-spaced larger than the base-band bandwidth. The circuit includes a radiofrequency transistor connected to a circuit output having a parasitic output capacitance. The source-drain terminal is electrically connected to the circuit output. An internal shunt inductor provides compensation for the parasitic output capacitance. A high-density capacitor is connected between the internal shunt inductor and a circuit ground. The high-density capacitor has a terminal with a surface area can be at least ten times that of a corresponding planar surface.

Abstract: A variety of circuits, methods and devices are implemented for radiofrequency amplifiers. According to one such implementation, a radiofrequency amplifier circuit is implemented in a SMD package. The circuit amplifies a radiofrequency signal having a base-band portion and a plurality of carrier signals frequency-spaced larger than the base-band bandwidth. The circuit includes a radiofrequency transistor connected to a circuit output having a parasitic output capacitance. The source-drain terminal is electrically connected to the circuit output. An internal shunt inductor provides compensation for the parasitic output capacitance. A high-density capacitor is connected between the internal shunt inductor and a circuit ground. The high-density capacitor has a terminal with a surface area can be at least ten times that of a corresponding planar surface.