Abstract: A method and an apparatus of plasma treating a wafer with low capacitive coupling, high induction power density and high uniformity of reactive species were disclosed in this invention. A first embodiment manages a multiturn helical coil to match with an impedance at an RF drive frequency for reducing capacitive coupling. A second embodiment uses a can-like dielectric to prompt plasma species approaching the wafer surface at a low pressure, thus providing higher plasma density and higher etch rate. A third embodiment uses a cap-like dielectric to raise the ceiling above the wafer for improving the plasma generation uniformity in the chamber.

Abstract: A method and a reactor of plasma treating a wafer with high induction plasma density and high uniformity of reactive species were disclosed in this invention. The inductively coupled plasma reactor of the present invention includes a vacuum chamber having a dielectric ceiling thereof and a unique coil configuration atop on the dielectric ceiling, wherein the dielectric ceiling is designed to have a different height according to its shape, e.g., a planar, dish-shaped or hat-shaped dielectric ceiling, for coupling an RF power into the chamber to excite the plasma. The unique coil configuration contains plural helical coils which are arranged in series or in parallel to provide a high-density uniform ion plasma for a large wafer treatment.