Patents by Inventor Freddy FACK

Freddy FACK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240133024
    Abstract: A target for sputtering, use of the target and method of manufacture of the target is provided. The target has a single piece target material for sputter deposition, with at least 1 mm thickness of material for sputtering, having a lamellar structure and comprising a metal oxide with at least 50 wt. % or more of tungsten oxide. The atomic ratio of oxygen over tungsten results in a compound with oxygen deficiency with respect to the stoichiometric tungsten oxide. The method includes spraying metallic tungsten and/or tungsten oxide powder in amounts so as to provide a layer of material for sputtering being at least 1 mm thick and comprising non-stoichiometric tungsten oxide.
    Type: Application
    Filed: March 4, 2022
    Publication date: April 25, 2024
    Inventors: Ignacio CARETTI GIANGASPRO, David DEBRUYNE, Freddy FACK, Wilmert DE BOSSCHER
  • Patent number: 11739415
    Abstract: A target for sputtering comprises SiZrxOy wherein x is higher than 0.02 but not higher than 5, and y is higher than 0.03 but not higher than 2*(1+x), wherein the target has an XRD pattern with silicon 2-theta peak at 28.29°+/?0.3°, or a tetragonal phase ZrO2 2-theta peak at 30.05°+/?0.3°. The target has a low resistivity, below 1000 ohm·cm, preferably below 100 ohm·cm, more preferably below 10 ohm·cm, even lower than 1 ohm·cm.
    Type: Grant
    Filed: November 12, 2019
    Date of Patent: August 29, 2023
    Assignee: SOLERAS ADVANCED COATINGS BV
    Inventors: Ignacio Caretti Giangaspro, Wilmert Cyriel Stefaan De Bosscher, David Karel Debruyne, Guy Gobin, Freddy Fack, Hubert Eliano
  • Publication number: 20210395878
    Abstract: A target for sputtering comprises SiZrxOy wherein x is higher than 0.02 but not higher than 5, and y is higher than 0.03 but not higher than 2*(1+x), wherein the target has an XRD pattern with silicon 2-theta peak at 28.29°+/?0.3°, or a tetragonal phase ZrO2 2-theta peak at 30.05°+/?0.3°. The target has a low resistivity, below 1000 ohm·cm, preferably below 100 ohm·cm, more preferably below 10 ohm·cm, even lower than 1 ohm·cm.
    Type: Application
    Filed: November 12, 2019
    Publication date: December 23, 2021
    Inventors: Ignacio CARETTI GIANGASPRO, Wilmert Cyriel Stefaan DE BOSSCHER, David Karel DEBRUYNE, Guy GOBIN, Freddy FACK, Hubert ELIANO
  • Publication number: 20210371970
    Abstract: In a first aspect, the present invention relates to a planar sputtering target comprising a target material layer built up by a layering of splats, wherein the target material layer has a layer width and has a microstructure which varies across the layer width. In a second aspect, the present invention relates to a method for manufacturing such a planar sputtering target.
    Type: Application
    Filed: October 6, 2019
    Publication date: December 2, 2021
    Inventors: Wilmert DE BOSSCHER, Ignacio CARETTI GIANGASPRO, David Karel DEBRUYNE, Hubert ELIANO, Freddy FACK, Tom COTTENS