Abstract: A manufacturing method of image sensor device is provided. The image sensor device is suitable for a substrate having at least one bonding pad. A plurality of photodiode sensing areas is formed on the substrate, at least a dielectric layer is formed over the substrate and the bonding pad is disposed in the dielectric layer. The method includes forming a cover layer on the dielectric layer. Next, the cover layer is patterned to form an opening in a first portion of the cover layer on the bonding pad. A second portion of the cover layer in the opening is retained to cover a portion of the surface of the bonding pad. A plurality of color filters is formed on the cover layer, and then a planarization layer is formed on the cover layer and the color filters. Thereafter, a plurality of micro lenses is formed on the planarization layer.

Abstract: A manufacturing method of image sensor device is provided. The image sensor device is suitable for a substrate having at least one bonding pad. Wherein a plurality of photodiode sensing areas are formed on the substrate, at least a dielectric layer is formed over the substrate and the bonding pad is disposed in the dielectric layer. Wherein a first cover layer having an opening is disposed over the dielectric layer, wherein a portion of the bonding pad is exposed within the opening, forming a second cover layer over the first cover layer and the opening, and forming color filters over the second cover layer, then forming a planarization layer over the second cover layer and the color filters, and forming a plurality of micro lenses over the planarization layer.