Abstract: A method for processing a low ohmic contact structure to a buried conductive layer in or below a device layer forming part of a semiconductor component is presented, whereby first a highly doped region within said device layer reaching said buried conductive layer is realised, this being followed by a step of etching a trench through said highly doped region to a final depth which extends at least to the semiconductor substrate underneath said buried conductive layer. In a variant method this trench is first pre-etched until a predetermined depth, before the highly doped region is provided. A semiconductor structure which is realised by these methods is described as well.

Abstract: A method for processing a low ohmic contact structure to a buried conductive layer in or below a device layer forming part of a semiconductor component is presented, whereby first a highly doped region within said device layer reaching said buried conductive layer is realised, this being followed by a step of etching a trench through said highly doped region to a final depth which extends at least to the semiconductor substrate underneath said buried conductive layer. In a variant method this trench is first pre-etched until a predetermined depth, before the highly doped region is provided.

Abstract: The invention relates to a process for the selective epitaxial growth of a Si containing layer (8) on a substrate (1), characterised in that the substrate (1) is provided with a layer (4) of silicon oxynitride with an atomic concentration of oxygen between 30 and 45% and an atomic concentration of nitrogen between 19 and 35% before the selective epitaxial growth of the Si containing layer (8).