Abstract: Techniques for bond pad fabrication are provided. In one aspect, a method of forming a bond pad comprises the following steps. At least one alloying element is selectively introduced to at least a portion of at least one surface of the bond pad. The at least one alloying element is diffused into at least a portion of the bond pad through one or more thermal cycles. The at least one alloying element may be selectively introduced to the bond pad by depositing an alloying element layer comprising the at least one alloying element onto the bond pad and patterning and etching at least a portion of the layer.

Abstract: Techniques for bond pad fabrication are provided. In one aspect, a method of forming a bond pad comprises the following steps. At least one alloying element is selectively introduced to at least a portion of at least one surface of the bond pad. The at least one alloying element is diffused into at least a portion of the bond pad through one or more thermal cycles. The at least one alloying element may be selectively introduced to the bond pad by depositing an alloying element layer comprising the at least one alloying element onto the bond pad and patterning and etching at least a portion of the layer.

Abstract: Inner wire bond pads are formed within a peripheral region of a semiconductor chip and at least one bonding wire is attached to the inner wire bond pads. The semiconductor chip may be customized for a specific configuration of choice by wiring inner wire bond pads. Alternately, the bonding wires may be employed to reinforce a power network or a ground network. Further, the bonding wire may serve as a passive radio frequency (RF) component. In addition, the bonding wire may be used a heat conduction path to transfer heat from the semiconductor chip to the upper package housing.

Abstract: Inner wire bond pads are formed within a peripheral region of a semiconductor chip and at least one bonding wire is attached to the inner wire bond pads. The semiconductor chip may be customized for a specific configuration of choice by wiring inner wire bond pads. Alternately, the bonding wires may be employed to reinforce a power network or a ground network. Further, the bonding wire may serve as a passive radio frequency (RF) component. In addition, the bonding wire may be used a heat conduction path to transfer heat from the semiconductor chip to the upper package housing.

Abstract: Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.

Abstract: Techniques for bond pad fabrication are provided. In one aspect, a method of forming a bond pad comprises the following steps. At least one alloying element is selectively introduced to at least a portion of at least one surface of the bond pad. The at least one alloying element is diffused into at least a portion of the bond pad through one or more thermal cycles. The at least one alloying element may be selectively introduced to the bond pad by depositing an alloying element layer comprising the at least one alloying element onto the bond pad and patterning and etching at least a portion of the layer.

Abstract: A device, system and method for the detection of intrusion using radio frequency (RF) signals are provided. The system comprises at least two devices. The system detects intrusion by measuring the Received Signal Strength (RSS) of a RF signal sent by the first device to the second device via a RF channel. The RF signal receiving device determines if the variation of the current RSS value is due to an intrusion in the RF channel or not an acts appropriately.

Abstract: A method for reducing the number of wire-bond loop heights which are required in comparison with a total quantity of power and signal rings employed in low profile wire-bond integrated circuit packages. There are also provided low profile wire-bond packages which are produced in accordance with the method pursuant to the invention.

Abstract: Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.

Abstract: Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.

Abstract: Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.

Abstract: A method for reducing the number of wire-bond loop heights which are required in comparison with a total quantity of power and signal rings employed in low profile wire-bond integrated circuit packages. There are also provided low profile wire-bond packages which are produced in accordance with the method pursuant to the invention.

Abstract: A method for reducing the number of wire-bond loop heights which are required in comparison with a total quantity of power and signal rings employed in low profile wire-bond integrated circuit packages. There are also provided low profile wire-bond packages which are produced in accordance with the method pursuant to the invention.

Abstract: A method for reducing the number of wire-bond loop heights which are required in comparison with a total quantity of power and signal rings employed in low profile wire-bond integrated circuit packages. There are also provided low profile wire-bond packages which are produced in accordance with the method pursuant to the invention.

Abstract: A method for reducing the number of wire-bond loop heights which are required in comparison with a total quantity of power and signal rings employed in low profile wire-bond integrated circuit packages. There are also provided low profile wire-bond packages which are produced in accordance with the method pursuant to the invention.