Abstract: A method for monitoring and/or controlling performance of a selective catalytic reduction (SCR) emission control system includes injecting a quantity of a pollution neutralizing gas into a combustion gas stream containing a pollutant gas. The method also includes passing the stream over a catalyst bed to facilitate a reaction of the pollution neutralizing gas with the pollutant gas to produce an effluent and measuring a ratio of the pollution neutralizing gas to the pollutant gas in the effluent.

Abstract: A fused quartz article, such as a muffle tube or crucible, with enhanced creep resistance. The enhanced creep resistance is the result of controlled devitrification of the fused quartz article. Controlled devitrification is achieved by coating the article with a colloidal silica slurry doped with metal cations, such as barium, strontium, and calcium. The metal cations in the slurry promote nucleation and growth of cristobalite crystals into the fused quartz at temperatures in the range from about 1000° C. to about 1600° C. The cristobalite has significantly higher viscosity, and therefore greater creep resistance at elevated temperatures, than fused quartz. Methods for applying a doped coating to a fused quartz article and improving the creep resistance of a fused quartz article are also disclosed.

Abstract: A crucible for melting a silica for fusion of said silica into a desired shape. The crucible having a main body with inner and outer surfaces comprised of a refractory material. In addition, at least a portion of the inner surface includes a barrier layer comprised of a material selected from rhenium, osmium, iridium, and mixtures thereof. An inlet tube to the crucible being provided to supply an oxidizing gas to a melt zone.

Abstract: A semiconductor processing component includes a quartz body characterized by silicon oxide filled micro cracks. The component is utilized as a processing component in a semiconductor furnace system. The quartz body is prepared by cleaning the component to remove a build up silicon layer and to expose micro cracks in the surface of the component and to etch the micro cracks into trenches. A silicon layer is applied onto the processing component body and at least a portion of the silicon is oxidized to silica to fill the trenches in the surface of the component body.

Abstract: A fused quartz article, such as a muffle tube or crucible, with enhanced creep resistance. The enhanced creep resistance is the result of controlled devitrification of the fused quartz article. Controlled devitrification is achieved by coating the article with a colloidal silica slurry doped with metal cations, such as barium, strontium, and calcium. The metal cations in the slurry promote nucleation and growth of cristobalite crystals into the fused quartz at temperatures in the range from about 1000° C. to about 1600° C. The cristobalite has significantly higher viscosity, and therefore greater creep resistance at elevated temperatures, than fused quartz. Methods for applying a doped coating to a fused quartz article and improving the creep resistance of a fused quartz article are also disclosed.

Abstract: A semiconductor processing component includes a quartz body characterized by silicon oxide filled micro cracks. The component is utilized as a processing component in a semiconductor furnace system. The quartz body is prepared by cleaning the component to remove a build up silicon layer and to expose micro cracks in the surface of the component and to etch the micro cracks into trenches. A silicon layer is applied onto the processing component body and at least a portion of the silicon is oxidized to silica to fill the trenches in the surface of the component body.

Abstract: A semiconductor processing component includes a quartz body characterized by silicon oxide filled micro cracks. The component is utilized as a processing component in a semiconductor furnace system. The quartz body is prepared by cleaning the component to remove a build up silicon layer and to expose micro cracks in the surface of the component and to etch the micro cracks into trenches. A silicon layer is applied onto the processing component body and at least a portion of the silicon is oxidized to silica to fill the trenches in the surface of the component body.

Abstract: An opaque silica comprises silica and at least one second phase solid material. The at least one second phase solid material is essentially uniformly dispersed in the silica. A cut surface formed through the silica is free from surface defects since the at least one second phase solid material forms an opaque silica that is free from porosity.