Abstract: The invention relates to a process for making a monolithic integrated structure comprising two opto-electronic components (K, D1) connected optically by an optical guide.It comprises the step consisting in making in situ between the two opto-electronic components at least one electrically insulating barrier (40) able to allow transmission of light between them, by one of the following means: localized doping with an element of conductivity of a given type, of a region of the structure of opposite conductivity type, epitaxial deposition of a layer of semi-insulating material.

Abstract: A semiconductor opto-electronic device including at least one electronic function component (62), at least one optical function component (60) and a mode transformer associated with the optical function component. At least some layers of semiconductor material constituting the electronic function component also form optical layers in the mode transformer zone and, at least in the mode transformer zone, these semiconductor material layers are non-absorbent at the operating wavelength. The mode transformer is preferably etched in the shape of an hourglass.