Abstract: The invention relates to a process for bonding by molecular adhesion of two substrates to one another during which the surfaces of the substrates are placed in close contact and bonding occurs by propagation of a bonding front between the substrates. The invention includes, prior to bonding, a step of modifying the surface state of one or both of the surfaces of the substrates so as to regulate the propagation speed of the bonding front. The surface can be modified by locally or uniformly heating or roughening the surface(s) of the substrate(s).

Abstract: The invention relates to equipment for carrying out a process for bonding by molecular adhesion of two substrates to one another during which the surfaces of the substrates are placed in close contact and bonding occurs by propagation of a bonding front between the substrates. The invention includes, prior to bonding, a step of modifying the surface state of one or both of the surfaces of the substrates so as to regulate the propagation speed of the bonding front. The surface can be modified by locally or uniformly heating or roughening the surface(s) of the substrate(s).

Abstract: The invention concerns a method of treating one or both bonding surfaces of first and second substrates and in particular, the surfaces of donor and receiver wafers that are intended to be bonded together. A simultaneous cleaning and activation step is carried out immediately prior to bonding the wafers together, by applying to one or both bonding surfaces an activation solution of ammonia (NH4OH) in water, preferably deionized, at a concentration by weight in the range from about 0.05% to 2%. The method is applicable to fabricating structures used in the optics, electronics, or optoelectronics fields.

Abstract: A method of planarization of a surface of a heteroepitaxial layer by chemical-mechanical polishing the disturbed surface of the heteroepitaxial layer with a polishing pad having a compressibility greater than 2% and less than 15% and a slurry comprising at least 20% of silica particles having an average diameter between about 70 and about 100 nm. This method allows to reach high polishing rates appropriated for eliminating surface defects on heteroepitaxial layers, such as crosshatch patterns, and to achieve, in the same time, a final polish that is desirable to facilitate further operations.

Abstract: The invention relates to equipment for carrying out a process for bonding by molecular adhesion of two substrates to one another during which the surfaces of the substrates are placed in close contact and bonding occurs by propagation of a bonding front between the substrates. The invention includes, prior to bonding, a step of modifying the surface state of one or both of the surfaces of the substrates so as to regulate the propagation speed of the bonding front. The surface can be modified by locally or uniformly heating or roughening the surface(s) of the substrate(s).

Abstract: The invention relates to a process for bonding by molecular adhesion of two substrates to one another during which the surfaces of the substrates are placed in close contact and bonding occurs by propagation of a bonding front between the substrates. The invention includes, prior to bonding, a step of modifying the surface state of one or both of the surfaces of the substrates so as to regulate the propagation speed of the bonding front. The surface can be modified by locally or uniformly heating or roughening the surface(s) of the substrate(s).

Abstract: The invention relates to a process for bonding by molecular adhesion of two substrates to one another during which the surfaces of the substrates are placed in close contact and bonding occurs by propagation of a bonding front between the substrates. The invention includes, prior to bonding, a step of modifying the surface state of one or both of the surfaces of the substrates so as to regulate the propagation speed of the bonding front. The surface can be modified by locally or uniformly heating or roughening the surface(s) of the substrate(s).

Abstract: The invention relates to a process for bonding by molecular adhesion of two substrates to one another during which the surfaces of the substrates are placed in close contact and bonding occurs by propagation of a bonding front between the substrates. The invention includes, prior to bonding, a step of modifying the surface state of one or both of the surfaces of the substrates so as to regulate the propagation speed of the bonding front. The surface can be modified by locally or uniformly heating or roughening the surface(s) of the substrate(s).

Abstract: A method of planarization of a surface of a heteroepitaxial layer by chemical-mechanical polishing the disturbed surface of the heteroepitaxial layer with a polishing pad having a compressibility greater than 2% and less than 15% and a slurry comprising at least 20% of silica particles having an average diameter between about 70 and about 100 nm. This method allows to reach high polishing rates appropriated for eliminating surface defects on heteroepitaxial layers, such as crosshatch patterns, and to achieve, in the same time, a final polish that is desirable to facilitate further operations.

Abstract: The invention concerns a method of treating one or both bonding surfaces of first and second substrates and in particular, the surfaces of donor and receiver wafers that are intended to be bonded together. A simultaneous cleaning and activation step is carried out immediately prior to bonding the wafers together, by applying to one or both bonding surfaces an activation solution of ammonia (NH4OH) in water, preferably deionized, at a concentration by weight in the range from about 0.05% to 2%. The method is applicable to fabricating structures used in the optics, electronics, or optoelectronics fields.

Abstract: The present invention relates to a method for recycling a substrate that has a residue on its surface and a detachment profile resulting from an implantation process. The method includes removing the residue from the substrate to a level substantially equivalent to that of the detachment profile, thus obtaining a substantially uniform planar surface on the substrate, and then polishing the entire surface of the substrate to eliminate defects.

Abstract: A solution for rinsing a surface that has been planarized using a chemical-mechanical planarization (“CMP”) technique. The solution may be a surfactant solution introduced following the use of a polishing solution in the CMP technique. The surfactant solution acts to clear undesirable particles from the planarized surface and also can terminate “latent” effects from the polishing solution. A cleaning solution is generally injected after the rinsing solution for additional cleaning effects. A plate covered with a textured material such a fabric is usually applied to the surface during the polishing, rinsing, or cleaning steps.

Abstract: The invention relates to a device and method for automatically determining the surface quality of a bonding interface between two wafers. The device includes a detector for automatically detecting a bonding wave at a predetermined measuring site to determine when bonding occurs at the measuring site, and a processing unit for automatically calculating the bonding speed based on a location of the measuring site and at least one other predetermined site.

Abstract: The present invention relates to a method for recycling a substrate that has a residue on its surface and a detachment profile resulting from an implantation process. The method includes removing the residue from the substrate to a level substantially equivalent to that of the detachment profile, thus obtaining a substantially uniform planar surface on the substrate, and then polishing the entire surface of the substrate to eliminate defects.

Abstract: A solution for rinsing a surface that has been planarized using a chemical-mechanical planarization (“CMP”) technique. The solution may be a surfactant solution introduced following the use of a polishing solution in the CMP technique. The surfactant solution acts to clear undesirable particles from the planarized surface and also can terminate “latent” effects from the polishing solution. A cleaning solution is generally injected after the rinsing solution for additional cleaning effects. A plate covered with a textured material such a fabric is usually applied to the surface during the polishing, rinsing, or cleaning steps.

Abstract: The invention relates to a device and method for automatically determining the surface quality of a bonding interface between two wafers. The device includes a detector for automatically detecting a bonding wave at a predetermined measuring site to determine when bonding occurs at the measuring site, and a processing unit for automatically calculating the bonding speed based on a location of the measuring site and at least one other predetermined site.

Abstract: The invention provides a chemical-mechanical polishing machine for polishing a wafer of a material, the machine comprising a rotary polishing turntable, a polishing head comprising a non-rotary portion and a rotary portion, and means for delivering an abrasive to the surface of the polishing turntable. The machine is remarkable in the means for distributing the abrasive comprise a hollow abrasive delivery ring fitted with abrasive feed means, with a plurality of abrasive delivery orifices distributed over its bottom face, and fixing means enabling it to be secured to the non-rotary portion of the polishing head, the ring being disposed around the rotary portion in a plane that is substantially parallel to the plane of the polishing turntable, but that is spaced apart therefrom. The invention is applicable to polishing wafers of semiconductor material.