Patents by Inventor Frederic Monsieur

Frederic Monsieur has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOS TRANSISTOR ON SOI STRUCTURE
    Publication number: 20230290786
    Abstract: A device includes an active semiconductor layer on top of and in contact with an insulating layer which overlies a semiconductor substrate. A transistor for the device includes a source region, a drain region, and a body region arranged in the active semiconductor layer. The body region of the transistor is electrically coupled to the semiconductor substrate using a conductive via that crosses through the insulating layer.
    Type: Application
    Filed: March 7, 2023
    Publication date: September 14, 2023
    Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SA
    Inventors: Sebastien CREMER, Frederic MONSIEUR, Alain FLEURY, Sebastien HAENDLER
  • METHOD OF FORMATION OF A SUBSTRATE OF THE SOI, IN PARTICULAR THE FDSOI, TYPE ADAPTED TO TRANSISTORS HAVING GATE DIELECTRICS OF DIFFERENT THICKNESSES, CORRESPONDING SUBSTRATE AND INTEGRATED CIRCUIT
    Publication number: 20160284807
    Abstract: A substrate of the silicon-on-insulator type is formed from an initial substrate of the silicon-on-insulator type having a semiconductor film on top of a buried insulating layer itself situated on top of a carrier substrate. A localized modification of a thickness of the semiconductor film is made so as to form a semiconductor film having different thicknesses in different regions.
    Type: Application
    Filed: November 2, 2015
    Publication date: September 29, 2016
    Applicants: STMICROELECTRONICS (CROLLES 2) SAS, STMICROELECTRONICS SA
    Inventors: David Petit, Frederic Monsieur, Xavier Federspiel, Gregory Bidal