Abstract: A conductor path structure has a damping device for an oscillation-damped and/or vibration-damped (electronic, electromechanical, micromechanical) component. The conductor path structure has a first base body made of a carrier material including a connection area for receiving the component. The connection area is arranged separated from an area of the first base body surrounding it and is arranged oscillation-damped and/or vibration damped and co-acting with an intrinsic damping device of the conductor path structure. The conductor path structure includes a second base body arranged at a distance under the first base body, wherein above the second base body of the conductor path structure at least one adhesive layer of a damping material is provided. The intrinsic damping device is formed by said at least one adhesive layer arranged between the connection area of the first base body and the area of the second base body arranged below the connection area.

Abstract: A conductor path structure has a damping device for an oscillation-damped and/or vibration-damped (electronic, electromechanical, micromechanical) component. The conductor path structure has a first base body made of a carrier material including a connection area for receiving the component. The connection area is arranged separated from an area of the first base body surrounding it and is arranged oscillation-damped and/or vibration damped and co-acting with an intrinsic damping device of the conductor path structure. The conductor path structure includes a second base body arranged at a distance under the first base body, wherein above the second base body of the conductor path structure at least one adhesive layer of a damping material is provided. The intrinsic damping device is formed by said at least one adhesive layer arranged between the connection area of the first base body and the area of the second base body arranged below the connection area.

Abstract: A conductor path structure has a damping device for an oscillation-damped and/or vibration-damped (electronic, electromechanical, micromechanical) component. The conductor path structure has a first base body made of a carrier material including a connection area for receiving the component. The connection area is arranged separated from an area of the first base body surrounding it and is arranged oscillation-damped and/or vibration damped and co-acting with an intrinsic damping device of the conductor path structure. The conductor path structure includes a second base body arranged at a distance under the first base body, wherein above the second base body of the conductor path structure at least one adhesive layer of a damping material is provided. The intrinsic damping device is formed by said at least one adhesive layer arranged between the connection area of the first base body and the area of the second base body arranged below the connection area.

Abstract: A conductor path structure has a damping device for an oscillation-damped and/or vibration-damped (electronic, electromechanical, micromechanical) component. The conductor path structure has a first base body made of a carrier material including a connection area for receiving the component. The connection area is arranged separated from an area of the first base body surrounding it and is arranged oscillation-damped and/or vibration damped and co-acting with an intrinsic damping device of the conductor path structure. The conductor path structure includes a second base body arranged at a distance under the first base body, wherein above the second base body of the conductor path structure at least one adhesive layer of a damping material is provided. The intrinsic damping device is formed by said at least one adhesive layer arranged between the connection area of the first base body and the area of the second base body arranged below the connection area.

Abstract: A method for producing a smartcard body for receiving a semiconductor chip includes forming at least one lead frame of the smartcard body in a carrier material connected by at least one material strip. Surrounding the at least one lead frame is an electrically insulating casing having a cavity for receiving the semiconductor chip. Either before or during the forming of the casing, the at least one material strip is separated or severed, so that the material strip is separated into a first strip part connected with the carrier material and a second strip part connected with the lead frame forming an interspace there between. When forming the casing at least a portion of the first strip part as well as at least a portion of the second strip part of the at least one material strip is comprised by the casing.

Abstract: A method for producing a smartcard body for receiving a semiconductor chip includes forming at least one lead frame of the smartcard body in a carrier material connected by at least one material strip. Surrounding the at least one lead frame is an electrically insulating casing having a cavity for receiving the semiconductor chip. Either before or during the forming of the casing, the at least one material strip is separated or severed, so that the material strip is separated into a first strip part connected with the carrier material and a second strip part connected with the lead frame forming an interspace there between. When forming the casing at least a portion of the first strip part as well as at least a portion of the second strip part of the at least one material strip is comprised by the casing.

Abstract: The present invention relates to a smart card body, a smart card, and a manufacturing process for the same, and in particular to smart cards used for subscriber identity modules (SIM) cards. To improve a process for the manufacture of a smart card body and a process for the assembly of a smart card in such a manner that a simple and adaptable process can be achieved for the manufacture of a smart card, a process for the manufacture of a smart card body (10) for incorporating a semiconductor chip is described, wherein the process comprises the formation of a lead frame (3) in a conductive layer (1), wherein the lead frame has first contacts (2) on a first surface and can be connected to the semiconductor chip on a second surface opposite the first surface, and the formation of a electrically insulating casing layer (11) on the second surface of the smart card body, wherein the casing layer (11) has a recess (12) for incorporating the semiconductor chip.