Abstract: Unlike most MEMS device configurations which simply switch between two positions in many optical devices the state of a MEMS mirror is important in all transition positions. It may determine the characteristics of an optical delay line system and by that an optical coherence tomography system in one application and in another the number of wavelength channels and the dynamic wavelength switching capabilities in the other. The role of the MEMS is essential and it is responsible for altering the paths of the different wavelengths in either device. It would be beneficial to improve the performance of such MEMS and thereby the performance of the optical components and optical systems they form part of. The inventors have established improvements to the design and implementation of such MEMS mirrors as well as optical waveguide technologies to in-plane optical processing as well as the mid infrared for optical spectroscopy.

Abstract: Capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics are disclosed. A capacitive based sensor is disposed over a first predetermined portion of a wafer that includes at least a first ceramic element providing protection for the final capacitive based sensor and self-aligned processing during its manufacturing.

Abstract: Hybrid optical integration places very strict manufacturing tolerances and performance requirements upon the multiple elements to exploit passive alignment techniques as well as having additional processing requirements. Alternatively, active alignment and soldering/fixing where feasible is also complex and time consuming with 3, 4, or 6-axis control of each element. However, microelectromechanical (MEMS) systems can sense, control, and activate mechanical processes on the micro scale. Beneficially, therefore the inventors combine silicon MEMS based micro-actuators with silicon CMOS control and drive circuits in order to provide alignment of elements within a silicon optical circuit either with respect to each other or with other optical elements hybridly integrated such as compound semiconductor elements. Such inventive MEMS based circuits may be either maintained as active during deployment or powered off once the alignment has been “locked” through an attachment/retention/latching process.

Abstract: Unlike most MEMS device configurations which simply switch between two positions in many optical devices the state of a MEMS mirror is important in all transition positions. It may determine the characteristics of an optical delay line system and by that an optical coherence tomography system in one application and in another the number of wavelength channels and the dynamic wavelength switching capabilities in the other. The role of the MEMS is essential and it is responsible for altering the paths of the different wavelengths in either device. It would be beneficial to improve the performance of such MEMS and thereby the performance of the optical components and optical systems they form part of. The inventors have established improvements to the design and implementation of such MEMS mirrors as well as optical waveguide technologies to in-plane optical processing as well as the mid infrared for optical spectroscopy.

Abstract: Micromachined microelectromechanical systems (MEMS) based resonators offer integration with other MEMS devices and electronics. Whilst piezoelectric film bulk acoustic resonators (FBAR) generally exhibit high electromechanical transduction efficiencies and low signal transmission losses they also suffer from low quality factors and limited resonance frequencies. In contrast electrostatic FBARs can yield high quality factors and resonance frequencies but suffer from increased fabrication complexity. lower electromechanical transduction efficiency and significant signal transmission loss. Accordingly, it would be beneficial to overcome these limitations by reducing fabrication complexity via a single metal electrode layer topping the resonator structure and supporting relatively low complexity/low resolution commercial MEMS fabrication processes by removing the fabrication requirement for narrow transduction gaps.

Abstract: This invention relates to ultra wideband wireless communications and more particularly communications systems exploiting mixerless transmitters and energy based receivers. The transmitter as an impulse radio with dynamic frequency and bandwidth hopping for dynamic setting of emitted power spectrum density. The receiver performs dynamic configuration by performing receipt of a wireless training pulse sequence.

Abstract: Ultra-Wideband (UWB) technology exploits modulated coded impulses over a wide frequency spectrum with very low power over a short distance for digital data transmission. Today's leading edge modulated sinusoidal wave wireless communication standards and systems achieve power efficiencies of 50 nJ/bit employing narrowband signaling schemes and traditional RF transceiver architectures. However, such designs severely limit the achievable energy efficiency, especially at lower data rates such as below 1 Mbps. Further, it is important that peak power consumption is supportable by common battery or energy harvesting technologies and long term power consumption neither leads to limited battery lifetimes or an inability for alternate energy sources to sustain them. Accordingly, it would be beneficial for next generation applications to exploit inventive transceiver structures and communication schemes in order to achieve the sub nJ per bit energy efficiencies required by next generation applications.

Abstract: Within many applications impulse radio based ultra-wideband (IR-UWB) transmission offers significant benefits for very short range high data rate communications when compared with existing standards and protocols. In many of these applications the main design goals are very low power consumption and very low complexity design for easy integration and cost reduction. Digitally programmable IR-UWB transmitters using an on-off keying modulation scheme on a 0.13 microns CMOS process operating on 1.2 V supply and yielding power consumption as low as 0.9 mW at a 10 Mbps data rate with dynamic power control are enabled. The IR-UWB transmitters support new frequency hopping techniques providing more efficient spectrum usage and dynamic allocation of the spectrum when transmitting in highly congested frequency bands. Biphasic scrambling is also introduced for spectral line reduction.

Abstract: Unlike most MEMS device configurations which simply switch between two positions in many optical devices the state of a MEMS mirror is important in all transition positions. It may determine the characteristics of an optical delay line system and by that an optical coherence tomography system in one application and in another the number of wavelength channels and the dynamic wavelength switching capabilities in the other. The role of the MEMS is essential and it is responsible for altering the paths of the different wavelengths in either device. It would be beneficial to improve the performance of such MEMS and thereby the performance of the optical components and optical systems they form part of. The inventors have established improvements to the design and implementation of such MEMS mirrors as well as optical waveguide technologies to in-plane optical processing as well as the mid infrared for optical spectroscopy.

Abstract: Wavelength division multiplexing (WDM) has enabled telecommunication service providers to fully exploit the transmission capacity of optical fibers. State of the art systems in long-haul networks now have aggregated capacities of terabits per second. Moreover, by providing multiple independent multi-gigabit channels, WDM technologies offer service providers with a straight forward way to build networks and expand networks to support multiple clients with different requirements. In order to reduce costs, enhance network flexibility, reduce spares, and provide re-configurability many service providers have migrated away from fixed wavelength transmitters, receivers, and transceivers, to wavelength tunable transmitters, receivers, and transceivers as well as wavelength dependent add-drop multiplexer, space switches etc.

Abstract: This invention relates to ultra wideband wireless communications and more particularly communications systems ex-ploiting mixerless transmitters and energy based receivers. The transmitter as an impulse radio with dynamic frequency and bandwidth hopping for dynamic setting of emitted power spectrum density. The receiver performs dynamic configuration by performing receipt of a wireless training pulse sequence.

Abstract: Micromachined gyroscopes, such as those based upon microelectromechanical systems (MEMS) have the potential to dominate the rate-sensor market mainly due to their small size, low power and low cost. As MEMS gyroscopes are resonant devices requiring active excitation it would be beneficial to improve the resonator Q-factor reducing the electrical drive power requirements for the excitation circuitry. Further, many prior art MEMS gyroscope designs have multiple resonances arising from design and manufacturing considerations which require additional frequency tuning and control circuitry together with the excitation/sense circuitry. It would therefore be beneficial to enhance the bandwidth of the resonators to remove the requirement for such circuitry. Further, to address the relatively large dimensions of MEMS gyroscopes it would be beneficial for the MEMS gyroscopes to be fabricated directly above the CMOS electronics thereby reducing the die dimensions and lowering per die cost.

Abstract: Considerations for selecting capacitive sensors include accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, integration options with other sensors and/or electronics, and cost effectiveness. It is beneficial if such sensors are amenable to above-IC integration with associated control/readout circuitry for reduced parasitics and reduced footprint through area sharing. The inventors have established a combined Lorentz force based magnetometer and accelerometer MEMS sensor exploiting a low temperature, above-IC-compatible fabrication process operating without requiring vacuum packaging.

Abstract: It would be beneficial to integrate MEMS devices with silicon CMOS electronics, package them in controlled environments, e.g. vacuum for MEMS resonators, and provide industry standard electrical interconnections such as solder bumps. However, to do so requires through-wafer via-based electrical interconnections. However, the fragile nature of the MEMS devices, the requirement for vacuum, hermetic sealing, and the stresses placed on metallization membranes are not present in conventional CMOS packaging. Accordingly there is provided a means of reinforcing through-wafer vias for integrated MEMS-CMOS circuits by in-filling the through-wafer electrical vias with low temperature deposited ceramic materials deposited with processes compatible with post-processing of CMOS electronics. Beneficially ceramics such as silicon carbide provide enhanced mechanical strength, enhanced expansion matching, and increased thermal conductivity in comparison to silicon and solder materials.

Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience while also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer.

Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer.

Abstract: Monolithically integrated capacitive micromachined transducers (CMTs) offer combined process steps, shared layers, simplified packaging, and reduced die size by overlapping the CMTs with the integrated circuit (IC) electronics. Moreover, a CMT array directly above the electronics also allows for varying the excitation signal phase to each CMT element thereby enabling beam-forming techniques. Above-IC integration is particularly attractive by not requiring any alteration of the semiconductor fabrication process and allowing subsequent implementation independent of IC fabrication. Naturally, this scheme requires that the CMT technology limit itself to IC compatible materials and chemicals, as well as process step temperatures within a specific thermal budget.

Abstract: Micromachined gyroscopes, such as those based upon microelectromechanical systems (MEMS) have the potential to dominate the rate-sensor market mainly due to their small size, low power and low cost. As MEMS gyroscopes are resonant devices requiring active excitation it would be beneficial to improve the resonator Q-factor reducing the electrical drive power requirements for the excitation circuitry. Further, many prior art MEMS gyroscope designs have multiple resonances arising from design and manufacturing considerations which require additional frequency tuning and control circuitry together with the excitation/sense circuitry. It would therefore be beneficial to enhance the bandwidth of the resonators to remove the requirement for such circuitry. Further, to address the relatively large dimensions of MEMS gyroscopes it would be beneficial for the MEMS gyroscopes to be fabricated directly above the CMOS electronics thereby reducing the die dimensions and lowering per die cost.

Abstract: Capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics are disclosed. A capacitive based sensor is disposed over a first predetermined portion of a wafer that includes at least a first ceramic element providing protection for the final capacitive based sensor and self-aligned processing during its manufacturing.

Abstract: A method for manufacturing microelectromechanical structures (MEMS) is disclosed. A low temperature MEMS device is designed. The low temperature MEM device is based upon a semiconductor manufacturing process comprising at least one semiconductor process for providing at least a heater therein. Each semiconductor process used in implementing the design is limited to a maximum temperature of the in-process low temperature MEMs device or a substrate onto which the low temperature MEMS device is being manufactured to below 300° C.